室温下工作的钽-硼-石墨烯集成振荡器
An Integrated Tantalum Sulfide - Boron Nitride - Graphene Oscillator: A Charge-Density-Wave Device Operating at Room Temperature
摘要：
电荷密度波（charge-density-wave，CDW）相是一种宏观的量子态，它由准一维或二维层状金属晶体中的电子电荷密度的周期性调制和原子晶格的周期性畸变组成。几种层状过渡金属二硫属化物，如1 T-TaSe 2，1 T-TaS 2和1 T-TiSe 2，表现出异常高的转变温度，以不同的CDW还原相。这些转变可以受到环境条件、膜厚度和施加的电偏压的影响。然而，这些有趣的系统在室温下的器件应用或与其他2D材料的集成尚未被探索。在这里，我们表明，在2D CDW 1 T-TaS 2中，电导率和滞后在近公度和不公度电荷密度波相位之间的过渡点处的突变可以用于构建在室温下工作的振荡器。六方氮化硼覆盖在1 T-TaS 2薄膜上以提供抗氧化保护，并且集成的石墨烯晶体管提供电压可调谐、匹配的低电阻负载，使得能够对振荡器频率进行精确的电压控制。这三种不同的二维材料的集成，以利用每一种材料的独特性质的方式，产生了一个简单的，小型化的压控振荡器设备。理论上的考虑表明，振荡频率的上限是在太赫兹制度。
英文摘要：
The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, such as 1T-TaSe2, 1T-TaS2 and 1T-TiSe2, exhibit unusually high transition temperatures to different CDW symmetry-reducing phases. These transitions can be affected by environmental conditions, film thickness and applied electric bias. However, device applications of these intriguing systems at room temperature or their integration with other 2D materials have not been explored. Here we show that in 2D CDW 1T-TaS2, the abrupt change in the electrical conductivity and hysteresis at the transition point between nearly-commensurate and incommensurate charge-density-wave phases can be used for constructing an oscillator that operates at room temperature. The hexagonal boron nitride was capped on 1T-TaS2 thin film to provide protection from oxidation, and an integrated graphene transistor provides a voltage tunable, matched, low-resistance load enabling precise voltage control of the oscillator frequency. The integration of these three disparate two-dimensional materials, in a way that exploits the unique properties of each, yields a simple, miniaturized, voltage-controlled oscillator device. Theoretical considerations suggest that the upper limit of oscillation frequency to be in the THz regime.
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