用于确定石墨烯中栅控n $\leftrightarrow$ p跃迁上中性点附近的剩余电子和空穴密度的方法
Method for determining the residual electron- and hole- densities about the neutrality point over the gate-controlled n $\leftrightarrow$ p transition in graphene
摘要：
霍尔效应，和对角电阻，这表明一个残余电阻率$ρ_{xx} \approx h/4e^{2}$，实验研究在p $\leftrightarrow$ n过渡的标称中性点在化学气相沉积（CVD）生长的石墨烯。中性电位的分布调用结合多载波传导模型的实验观察。从模型中，我们提取了有效的剩余电子和空穴密度周围的名义中性点。结果表明，由于在大面积零带隙CVD石墨烯器件中共存的电子和空穴而导致的混合输运，这表明在栅极诱导的n $\leftrightarrow$ p跃迁上广泛存在域限制的双极电流。
英文摘要：
The Hall effect, and the diagonal resistance, which indicates a residual resistivity $ρ_{xx} \approx h/4e^{2}$, are experimentally examined over the p$\leftrightarrow$n transition about the nominal neutrality point in chemical vapor deposition (CVD) grown graphene. A distribution of neutrality potentials is invoked in conjunction with multi-carrier conduction to model the experimental observations. From the modeling, we extract the effective residual electron- and hole- densities around the nominal neutrality point. The results indicate mixed transport due to co-existing electrons and holes in large area zero-band gap CVD graphene devices, which indicates domain confined ambipolar currents broadly over the gate-induced n $\leftrightarrow$ p transition.
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