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arXiv 1602.01583physics.ins-detcond-mat.mtrl-sci
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CdS/CdTe串联多结太阳电池效率的模拟

Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells

Ashrafalsadat S. Mirkamali, Khikmat Kh. Muminov

摘要:

本文利用AMPS-1D软件对CdS/CdTe太阳电池进行了研究。首先研究了半导体层厚度对CdS/CdTe太阳电池输出参数的影响,如短路电流密度、开路电压、填充因子和效率。数值模拟表明,当CdTe层厚度为1000 nm,CdS层厚度为60 nm时,单结CdS/CdTe太阳电池的效率最高,为18.3%。然后,为了获得最大值的效率,新的串联多结结构,包括层的两个太阳能电池彼此背靠背连接的设计和工程考虑到单结太阳能电池所获得的结果。数值模拟表明,当CdS p层厚度为50 nm,CdS n层厚度为200 nm,而CdTe n层和CdTe p层厚度分别为3000 nm和1000 nm时,其效率最高,为31.8%。

英文摘要:

In this paper we study CdS/CdTe solar cells by means of AMPS-1D software. First we study the effect of thickness of semiconductor layers on the output parameters of the CdS/CdTe solar cell, such as density of short-circuit current, open circuit voltage, fill factor and efficiency. Numerical simulation shows that the highest efficiency of single-junction CdS/CdTe solar cell equal to 18.3% is achieved when the CdTe layer thickness is 1000 nm and a CdS layer is 60 nm. Then, in order to obtain the maximal value of the efficiency, new tandem multi-junction structure consisting of layers of two solar cells connected with each other back to back are designed and engineered taking into account the results obtained for the single-junction solar cells. Numerical simulations show that its highest efficiency in 31.8% can be obtained when the thickness of CdS p-layer is equal to 50 nm, and the thickness of the CdS n-layer is equal to 200 nm, while thicknesses of the CdTe n-layer and CdTe p-layer are kept fixed and equal to 3000 nm and 1000 nm, respectively.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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