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arXiv 1602.01074physics.opticscond-mat.mes-hall
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Bi2Se3中的光电流:体电流与表面电流以及注入电流与位移电流

Photocurrents in Bi2Se3: bulk versus surface, and injection versus shift currents

Derek A. Bas, Rodrigo A. Muniz, Sercan Babakiray, David Lederman, J. E. Sipe, Alan D. Bristow

摘要:

光学注入和电荷电流的检测可以补充传统的传输和光电发射测量,而不需要侵入性接触,可能会干扰被检查的系统。这对于拓扑绝缘体的表面状态是特别关注的。在这项工作中,一个和两个颜色的光电流源检查在外延,薄膜的Bi 2 Se 3。我们证明,光激发和太赫兹检测同时捕获一个和两个颜色的光电流的贡献,因为以前不需要在其他材料系统。设计了一种方法来隔离这两个组件,并且在这样做的过程中,每个组件都可以通过对称性与表面或体激发相关。该策略允许在模型系统中检查表面状态,在该模型系统中,它们已经用角分辨光电子能谱独立地进行了验证。

英文摘要:

Optical injection and detection of charge currents can complement conventional transport and photoemission measurements without the necessity of invasive contact that may disturb the system being examined. This is a particular concern for the surface states of a topological insulator. In this work one- and two-color sources of photocurrents are examined in epitaxial, thin films of Bi2Se3. We demonstrate that optical excitation and terahertz detection simultaneously captures one- and two- color photocurrent contributions, as previously not required in other material systems. A method is devised to isolate the two components, and in doing so each can be related to surface or bulk excitations through symmetry. This strategy allows surface states to be examined in a model system, where they have independently been verified with angle-resolved photoemission spectroscopy.

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