We present a molecular modeling study analyzing nanometer-scale strain variations in graphene as a function of externally applied tensile strain. We consider two different mechanisms that could underlie nanometer-scale strain variations: static perturbations from lattice imperfections of an underlying substrate and thermal fluctuations. For both cases we observe a decrease in the out-of-plane atomic displacements with increasing strain, which is accompanied by an increase in the in-plane displacements. Reflecting the non-linear elastic properties of graphene, both trends together yield a non-monotonic variation of the total displacements with increasing tensile strain. This variation allows to test the role of nanometer-scale strain variations in limiting the carrier mobility of high-quality graphene samples.
Confocal Raman spectroscopy is a versatile, non-invasive investigation tool and a major workhorse for graphene characterization. Here we show that the experimentally observed Raman 2D line width is a measure of nanometer-scale strain variations in graphene. By investigating the relation between the G and 2D line at high magnetic fields we find that the 2D line width contains valuable information on nanometer-scale flatness and lattice deformations of graphene, making it a good quantity for classifying the structural quality of graphene even at zero magnetic field.
Changes in strain can be used to modify electronic and magnetic properties in crystal structures, to manipulate nanoparticles and cells, or to control chemical reactions. The magneto-elastic (ME) effect--the change of magnetic properties caused by the elastic deformation (strain) of a magnetic material--has been proposed as an alternative approach to magnetic fields for the low power control of magnetization states of nanoelements since it avoids charge currents, which entail ohmic losses. Multiferroic heterostructures \cite{Zheng2004} and nanocomposites have exploited this effect in search of…
We introduce a method which enables to directly compare the impact of elastic strain on the optical properties of distinct quantum dots (QDs). Specifically, the QDs are integrated in a cross-section of a semiconductor core wire which is surrounded by an amorphous straining shell. Detailed numerical simulations show that, thanks to the mechanical isotropy of the shell, the strain field in a core section is homogeneous. Furthermore, we use the core material as an in situ strain gauge, yielding reliable values for the emitter energy tuning slope. This calibration technique is applied to self-asse…
Monolayer transition metal dichalcogenides (TMDs) are known to be highly sensitive to externally applied tensile or compressive strain. In particular, strain can be exploited as a tool to control the optical response of TMDs. However, the role of excitonic effects under strain has not been fully understood yet. Utilizing the strain-induced modification of electron and phonon dispersion obtained by first principle calculations, we present in this work microscopic insights into the strain-dependent optical response of various TMD materials. In particular, we explain recent experiments on the cha…
Understanding how the mechanical behavior of materials deviates at the nanoscale from the macroscopically established concepts is a key challenge of particular importance for graphene, given the complex interplay between its nanoscale morphology and electronic properties. In this work, the (sub-) nanometer wavelength periodic rippling of suspended graphene nanomembranes has been realized by thermal strain-engineering and investigated using Scanning Tunneling Microscopy. This allows us to explore the rippling of a crystalline membrane with wavelengths comparable to its lattice constant. The obs…
Networks of graphene-based topological domain walls function as nano-scale interferometers of zero-line modes, with magnetic field and(or) scalar potential as the controlling parameters. In the absence of externally applied magnetic or electrical field, strain induces pseudomagnetic field and scalar potential in graphene, which could control the interferometers more efficiently. Two types of strains are considered: (i) Horizontally bending the graphene nanoribbon into circular arc induces nearly uniform pseudomagnetic field; (ii) Helicoidal graphene nanoribbon exhibit nonuniform pseudomagnetic…
Lacking a band gap largely limits the application of graphene in electronic devices. Previous study shows that grain boundaries (GBs) in polycrystalline graphene can dramatically alter the electrical properties of graphene. Here, we investigate the band structure of polycrystalline graphene tuned by externally imposed strains and intrinsic mismatch strains at the GB by density functional theory (DFT) calculations. We found that graphene with symmetrical GBs typically has zero band gap even with large uniaxial and biaxial strain. However, some particular asymmetrical GBs can open a band gap in …
We show how the pairing symmetry of superconducting states in twisted bilayer graphene can be experimentally identified by theoretically studying effects of externally applied in-plane magnetic field and strain. In the low field regime, superconducting critical temperature $T_c$ is suppressed by in-plane magnetic field $\boldsymbol{B}_{\parallel}$ in singlet channels, but is enhanced by weak $\boldsymbol{B}_{\parallel}$ in triplet channels, providing an important distinction. The in-plane angular dependence of the critical $\boldsymbol{B}_{\parallel, c}$ has a six-fold rotational symmetry, whi…
Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically light matter interaction in graphene is of a broadband type. However by integrating graphene into optical micro cavities also narrow band light emitters and detectors have been demonstrated. The devices benefit from the transparency, conductivity and processability of the atomically thin material. To this end we explore in this work the feasibility of replacing graphene by nanocrystalline graphene, a material which can be grown on dielectric surfaces…
We examine strain-induced quantized Landau levels in graphene. Specifically, arc-bend strains are found to cause nonuniform pseudomagnetic fields. Using an effective Dirac model which describes the low-energy physics around the nodal points, we show that several of the key qualitative properties of graphene in a strain-induced pseudomagnetic field are different compared to the case of an externally applied physical magnetic field. We discuss how using different strain strengths allows us to spatially separate the two components of the pseudospinor on the different sublattices of graphene. Thes…
Detection of local strain at the nanometer scale with high sensitivity remains challenging. Here we report near-field infrared nano-imaging of local strains in bilayer graphene through probing strain-induced shifts of phonon frequency. As a non-polar crystal, intrinsic bilayer graphene possesses little infrared response at its transverse optical (TO) phonon frequency. The reported optical detection of local strain is enabled by applying a vertical electrical field that breaks the symmetry of the two graphene layers and introduces finite electrical dipole moment to graphene phonon. The activate…
Graphene nanoribbons with armchair edges are studied for externally enhanced, but realistic parameter values: enhanced Rashba spin-orbit coupling due to proximity to a transition metal dichalcogenide like WS$_{2}$, and enhanced Zeeman field due to exchange coupling with a magnetic insulator like EuS under applied magnetic field. The presence of s--wave superconductivity, induced either by proximity or by decoration with alkali metal atoms like Ca or Li, leads to a topological superconducting phase with Majorana end modes. The topological phase is highly sensitive to the application of uniaxial…
Confinement of electrons in graphene to make devices has proven to be a challenging task. Electrostatic methods fail because of Klein tunneling, while etching into nanoribbons requires extreme control of edge terminations, and bottom-up approaches are limited in size to a few nanometers. Fortunately, its mechanical flexibility raises the possibility of using strain to alter graphene's properties and create novel straintronic devices. Here, we report transport studies of nanowires created by linearly-shaped strained regions resulting from individual folds formed by layer transfer onto hexagonal…
The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to the lack of scalable materials to properly tailor the valence band character and its energy offsets, the precise engineering of light-hole (LH) states remains a serious obstacle toward coherent photon-spin interfaces needed for a direct mapping of the quantum information encoded in photon flying qubits to stationary spin processor.4-9 Herein, to alleviate this long-standing limitation we demonstrate an all-group IV low…
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoiding the use of external stressors, and thus improving the scalability. Spectro-microscopy techniques, finite element method simulations and ab initio calculations are used to investigate the strain state of laterally confined Ge-rich SiGe nano-stripes. Strain information is obtained by tip enhanced Raman spectroscopy with an unprecedented lateral re…
In previous studies, it proved difficult to realize periodic graphene ripples with wavelengths of few nanometers. Here we show that one-dimensional periodic graphene ripples with wavelengths from 2 nm to tens of nanometers can be implemented in the intrinsic areas of a continuous mosaic, locally N-doped, graphene monolayer by simultaneously using both the thermal strain engineering and the anisotropic surface stress of Cu substrate. Our result indicates that the constraint imposed at the boundaries between the intrinsic and the N-doped regions play a vital role in creating these 1D ripples. We…
Atomistic simulations were utilized to obtain microscopic information of the elongation process in graphene sheets consisting of various embedded symmetric tilt grain boundaries (GBs). In contrast to pristine graphene, these GBs fractured in an extraordinary pattern under transverse uniaxial elongation in all but the largest misorientation angle case, which exhibited intermittent crack propagation and formed many stringy residual connections after quasi mechanical failure. The strings known as monoatomic carbon chains (MACCs), whose importance was recently highlighted, gradually extended to a …
