反转层中的Stoner磁性
Stoner Magnetism in an Inversion Layer
摘要：
受最近的实验工作的启发，Si-MOSFET的磁性，我们报告的磁化强度和磁化率的反型层中的电子的计算，考虑到电子波函数在垂直于平面的方向上的坐标依赖性。假设反型层载流子通过接触排斥势相互作用，在平均场水平下处理，导致波函数轮廓的自洽变化。我们发现，结果显着不同的纯2DEG的情况下（其中没有规定是在横向方向上的量子运动）。具体地说，达到铁磁（斯通纳）不稳定性所需的相互作用的临界值降低，斯通纳标准，因此放松。这导致增加的磁化率，并最终在高密度金属区深处发生铁磁转变。在相反的限制低载流子密度，在平面内的相关效应的现象学处理表明铁磁不稳定性以上的金属-绝缘体过渡。结果进行了讨论的背景下，现有的实验数据。
英文摘要：
Motivated by recent experimental work on magnetic properties of Si-MOSFETs, we report a calculation of magnetisation and susceptibility of electrons in an inversion layer, taking into account the co-ordinate dependence of electron wave function in the direction perpendicular to the plane. It is assumed that the inversion-layer carriers interact via a contact repulsive potential, which is treated at a mean-field level, resulting in a self-consistent change of profile of the wave functions. We find that the results differ significantly from those obtained in the pure 2DEG case (where no provision is made for a quantum motion in the transverse direction). Specifically, the critical value of interaction needed to attain the ferromagnetic (Stoner) instability is decreased and the Stoner criterion is therefore relaxed. This leads to an increased susceptibility and ultimately to a ferromagnetic transition deep in the high-density metallic regime. In the opposite limit of low carrier densities, a phenomenological treatment of the in-plane correlation effects suggests a ferromagnetic instability above the metal-insulator transition. Results are discussed in the context of the available experimental data.
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