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arXiv 1507.07035physics.ins-det
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双SOI器件中TID效应补偿及传感器-电路串扰抑制

TID-Effect Compensation and Sensor-Circuit Cross-Talk Suppression in Double-SOI Devices

Shunsuke Honda, Kazuhiko Hara, Daisuke Sekigawa, Bipin Subedi, Mari Asano, Naoshi Tobita, Wataru Aoyagi, Yasuo Arai, Akimasa Ishikawa, Yoshimasa Ono, Itaru Ushi… 展开作者

Shunsuke Honda, Kazuhiko Hara, Daisuke Sekigawa, Bipin Subedi, Mari Asano, Naoshi Tobita, Wataru Aoyagi, Yasuo Arai, Akimasa Ishikawa, Yoshimasa Ono, Itaru Ushiki, SOI Collaboration

备注：
Proceedings of International Workshop on SOI Pixel Detector (SOIPIX2015), Tohoku University, Sendai, Japan, 3-6, June, 2015. C15-06-03
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摘要：

我们正在开发用于各种应用的双绝缘体上硅（DSOI）像素传感器，例如用于高能实验。DSOI器件的性能进行了评估，包括总电离损伤（TID）的影响补偿晶体管中使用的测试元件组（TEG）高达2 MGy和集成型传感器高达100 kGy。在这篇文章中，成功的TID补偿像素ASD读出电路显示高达100 kGy的DSOI计数型传感器的应用。DSOI中的串扰抑制正在被评估。这些结果表明，DSOI传感器可应用于未来的高能实验，如BELLE-II实验或ILC实验。

英文摘要：

We are developing double silicon-on-insulator (DSOI) pixel sensors for various applications such as for high-energy experiments. The performance of DSOI devices has been evaluated including total ionization damage (TID) effect compensation in transistors using a test-element-group (TEG) up to 2 MGy and in integration-type sensors up to 100 kGy. In this article, successful TID compensation in a pixel-ASD-readout-circuit is shown up to 100 kGy for the application of DSOI to counting-type sensors. The cross-talk suppression in DSOI is being evaluated. These results encourage us that DSOI sensors are applicable to future high-energy experiments such as the BELLE-II experiment or the ILC experiment.

机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。

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