MOCVD合成组分调谐的拓扑绝缘体纳米线
MOCVD synthesis of compositionally tuned topological insulator nanowires
摘要：
涉及拓扑绝缘体（TI）的器件应用将需要开发用于制造具有亚微米尺寸、高质量表面和受控成分的TI样品的可扩展方法。在这里，我们使用Bi-，Se-和Te-轴承金属有机前体合成TI的纳米线的形式。单晶纳米线可以用范围从Bi 2Se 3到Bi 2 Te 3的组成生长，包括三元化合物Bi 2 Te 2Se。这些高质量的纳米结构TI化合物是正在进行的马约拉纳费米子搜索的合适平台。
英文摘要：
Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub-micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi-, Se-, and Te-bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi2Se3 to Bi2Te3, including the ternary compound Bi2Te2Se. These high quality nanostructured TI compounds are suitable platforms for on-going searches for Majorana Fermions.
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