层状半导体结构中的三维界面粗糙度及其对子带间跃迁的影响
Three-Dimensional Interface Roughness in Layered Semiconductor Structures and Its Effects on Intersubband Transitions
摘要：
本文导出了一个处理层状半导体结构中三维界面粗糙度（IFR）效应的一般模型，并进行了实验验证。IFR势的分解平均在面外方向上产生有效的分级势，极大地改变了结构的能谱。IFR散射的自能也来自一般情况下，当IFR是强的，其散射效应示出占主导地位的声子相互作用和杂质散射。当应用到子带间跃迁时，理论预测解释了实验观察到的异常能量位移和不寻常的增宽的III-氮化物薄层超晶格中的ISB跃迁。
英文摘要：
A general model for treating the effects of three dimensional interface roughness (IFR) in layered semiconductor structures has been derived and experimentally verified. Configurational averaging of the IFR potential produces an effective grading potential in the out-of-plane direction, greatly altering the energy spectrum of the structures. IFR scattering self-energy is also derived for the general case; when IFR is strong, its scattering effect is shown to dominate over phonon interaction and impurity scattering. When applied to intersubband transitions, the theoretical predictions explain the experimental observation of the anomalous energy shift and unusual broadening of the ISB transitions in III-Nitride thin-layered superlattices.
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