不同衬底温度下反应IBSD生长纳米晶AlN薄膜的光学带隙和带尾
Optical band gap and associated band-tails in nanocrystalline AlN thin films grown by reactive IBSD at different substrate temperatures
摘要：
采用反应离子束溅射沉积（IBSD）方法在Si（100）衬底上生长了AlN薄膜，衬底温度从室温（RT）到500 ℃变化。用透射电子显微镜（TEM）观察了衬底温度引起的非晶、纳米晶和微晶的转变。平均表面粗糙度（Ra）和形态已被探索通过使用原子力显微镜（AFM）。用紫外-可见分光光度法在反射模式下研究了衬底温度引起的薄膜光学带隙的变化。发现随着衬底温度从室温升高到500 ℃，Eg从5.08增加到5.21 eV。Urbach能量尾（Eu）以及弱吸收尾（WAT）的能量（Et）已被估计占的光学无序，这是发现减少与相关的Eg的增加。
英文摘要：
AlN thin films have been grown on Si (100) substrates by reactive ion beam sputter deposition (IBSD) at different substrate temperatures varying from room temperature (RT) to 500oC. Substrate temperature induced microstructural transition from amorphous at RT, nanocrystalline at 300oC to microcrystalline at 400oC has been observed by Transmission Electron Microscopy (TEM). Average surface roughness (Ra) and morphology has been explored by using Atomic Force Microscopy (AFM). UV-VIS spectrophotometry has been employed to probe the substrate temperature induced changes in optical band-gap (Eg) of grown thin films in reflectance mode. It was found that Eg was increased from 5.08 to 5.21 eV as substrate temperature was increased from RT to 500oC. Urbach energy tail (Eu) along with weak absorption tail (WAT) energy (Et) have been estimated to account for the optical disorder which was found to decrease with associated increase in Eg.
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