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arXiv 1507.01668cond-mat.supr-con
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电子掺杂铜氧化物的二维超导体-绝缘体量子相变

Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate

S. W. Zeng, Z. Huang, W. M. Lv, N. N. Bao, K. Gopinadhan, L. K. Jian, T. S. Herng, Z. Q. Liu, Y. L. Zhao, C. J. Li, H. J. Harsan Ma, P. Yang, J. Ding, T. Venkatesan, Ariando

摘要:

我们利用离子液体辅助的电场效应来调节电子掺杂铜氧化物超薄膜中的载流子密度,并引起二维超导体-绝缘体转变(SIT)。该系统的低上临界场使我们能够在液栅超导薄膜中进行磁场(B)诱导的SIT。有限尺寸标度分析表明,电场和磁场诱导的SIT都是量子相变,并且这种相变受渗流效应控制,前者是量子力学的,后者是经典的.与空穴掺杂的铜氧化物相比,电子掺杂体系中的SIT发生在远低于量子对电阻RQ=h/(2 e)2=6.45 kΩ的临界薄层电阻Rc处,表明在SIT附近的绝缘相存在有限温度下的费米子激发.

英文摘要:

We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and magnetic field are quantum phase transitions and the transitions are governed by percolation effects - quantum mechanical in the former and classical in the latter case. Compared to the hole-doped cuprates, the SITs in electron-doped system occur at critical sheet resistances (Rc) much lower than the pair quantum resistance RQ=h/(2e)2=6.45 kΩ, suggesting the possible existence of fermionic excitations at finite temperature at the insulating phase near SITs.

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