低<100>阈值Ge Laser的单轴应变反常阈值降低
Anomalous Threshold Reduction from <100> Uniaxial Strain for a Low-Threshold Ge Laser
摘要：
利用<100>形变势理论研究了单轴应变对锗硅激光器的影响。我们预测，当对Ge增益介质施加足够的单轴拉伸应变时，阈值会突然急剧降低约200倍。这种异常的减少是伴随着突然跳跃的发射波长，并解释了轻空穴带如何提高相对于重空穴带由于单轴应变。约3.2%的单轴应变是需要实现这种异常的阈值降低为1x 1019 cm-3的n型掺杂，和单轴应变和n型掺杂之间的复杂的相互作用进行观察。这种异常的阈值降低代表了单轴应变Ge激光器相对于其他形式的Ge能带工程（如双轴应变或锡合金化）的显著性能优势。实现这种临界的单轴应变和掺杂的异常阈值降低的组合是显着更相关的实际设备比实现直接带隙。
英文摘要：
We theoretically investigate the effect of <100> uniaxial strain on a Ge-on-Si laser using deformation potentials. We predict a sudden and dramatic ~200x threshold reduction upon applying sufficient uniaxial tensile strain to the Ge gain medium. This anomalous reduction is accompanied by an abrupt jump in the emission wavelength and is explained by how the light-hole band raises relative to the heavy-hole band due to uniaxial strain. Approximately 3.2% uniaxial strain is required to achieve this anomalous threshold reduction for 1x1019 cm-3 n-type doping, and a complex interaction between uniaxial strain and n-type doping is observed. This anomalous threshold reduction represents a substantial performance advantage for uniaxially strained Ge lasers relative to other forms of Ge band engineering such as biaxial strain or tin alloying. Achieving this critical combination of uniaxial strain and doping for the anomalous threshold reduction is dramatically more relevant to practical devices than realizing a direct band gap.
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