门控MoS $_{2}$中的二维Ising超导
Two Dimensional Ising Superconductivity in Gated MoS$_{2}$
摘要：
通常被认为对超导性有害的塞曼效应可以令人惊讶地保护通过选通层状过渡金属二硫属化物而产生的超导态。这种有效的塞曼场是由面内反转对称性破缺引起的内禀自旋轨道耦合引起的，其量级可达近百特斯拉。它强烈地将电子的自旋取向钉扎到面外方向，并保护超导电性不被面内外部磁场破坏。在离子栅MoS $_{2}$晶体管的磁输运实验中，通过测量远超过泡利顺磁极限的面内临界场$\textit{B}$ $_{c2}$，我们确实观察到了自旋保护的超导性。门控增强的$\textit{B}$ $_{c2}$是大于一个数量级的大块超导相相比，有效的塞曼场被削弱层间耦合。我们的研究给出了伊辛超导体的第一个实验证据，其中成对电子的自旋被有效的塞曼场强烈钉扎。
英文摘要：
The Zeeman effect, which is usually considered to be detrimental to superconductivity, can surprisingly protect the superconducting states created by gating a layered transition metal dichalcogenide. This effective Zeeman field, which is originated from intrinsic spin orbit coupling induced by breaking in-plane inversion symmetry, can reach nearly a hundred Tesla in magnitude. It strongly pins the spin orientation of the electrons to the out-of-plane directions and protects the superconductivity from being destroyed by an in-plane external magnetic field. In magnetotransport experiments of ionic-gate MoS$_{2}$ transistors, where gating prepares individual superconducting state with different carrier doping, we indeed observe a spin- protected superconductivity by measuring an in-plane critical field $\textit{B}$$_{c2}$ far beyond the Pauli paramagnetic limit. The gating-enhanced $\textit{B}$$_{c2}$ is more than an order of magnitude larger compared to the bulk superconducting phases where the effective Zeeman field is weakened by interlayer coupling. Our study gives the first experimental evidence of an Ising superconductor, in which spins of the pairing electrons are strongly pinned by an effective Zeeman field.
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