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arXiv 1506.06397cond-mat.str-el
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对关于复合氧化物中序参量的选择性界面控制的评论(arXiv:1506.02787 v1)的回复

Response to Comment (arXiv:1506.02787v1) on Selective Interface Control of Order Parameters in Complex Oxides

D. Meyers, Jian Liu, J. W. Freeland, S. Middey, M. Kareev, J. M. Zuo, Yi-De Chuang, Jong Woo Kim, P. Ryan, J. Chakhalian

摘要:

作为对Lu等人(arXiv:1506.02787v1)的回应,我们在这里就他们对我们的电子版(arXiv:1505.07451)的评论中提出的问题提供了详细的书面说明。Lu等人提出的关键问题是,由于薄膜厚度的原因,块状电荷有序态是否会因共振散射而变得不可检测。在这个答复中,我们首先详细介绍了我们的工作的关系,过去的工作相同的化合物的Staub等人证明,所提出的数据确实足以支持我们的索赔的超薄膜的NdNiO 3(NNO)的NdGaO 3(NGO)的无电荷秩序。此外,我们证明,如果一个定义良好的电荷有序相存在于超薄膜,它确实是可分辨的,如在EuNiO 3(ENO)。

英文摘要:

In response to Lu et al, (arXiv:1506.02787v1), here we present a detailed writeup concerning the questions raised in their comment on our eprint (arXiv:1505.07451). The key question raised by Lu et al was if the bulk-like charge ordered state becomes indetectable with resonant scattering due to ultrathin film thickness. In this reply, we first detail the relation of our work to past work on the same compound by Staub et al to demonstrate that the presented data are indeed sufficient to support our claims of no charge order on ultra thin films of NdNiO3 (NNO) on NdGaO3 (NGO). Further, we demonstrate that if a well defined charge ordered phase exists in ultra thin films, it is indeed resolvable such as that in EuNiO3 (ENO).

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