arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1505.04591cond-mat.str-elcond-mat.mtrl-sci
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探测强关联材料基态对称性的偏振硬X射线光电子发射系统

Photoemission System with Polarized Hard X-rays for Probing Ground State Symmetry of Strongly Correlated Materials

H. Fujiwara, S. Naimen, A. Higashiya, Y. Kanai, H. Yomosa, K. Yamagami, T. Kiss, T. Kadono, S. Imada, A. Yamasaki, K. Takase, S. Otsuka, T. Shimizu, S. Shinguba… 展开作者

H. Fujiwara, S. Naimen, A. Higashiya, Y. Kanai, H. Yomosa, K. Yamagami, T. Kiss, T. Kadono, S. Imada, A. Yamasaki, K. Takase, S. Otsuka, T. Shimizu, S. Shingubara, S. Suga, M. Yabashi, K. Tamasaku, T. Ishikawa, A. Sekiyama

摘要:

我们建立了一个极化硬X射线光电子能谱(HAXPES)系统来研究强关联材料的基态对称性。由两个金刚石(100)晶体组成的透射型相位延迟器对入射X射线束的线偏振进行切换。最佳的线偏振度$P_L$是$-0.96$,包含98%的垂直偏振分量。新型低温双轴机械手可方便地进行极向和方位向旋转,以选择光电子的探测方向。最低温度达到9 K,这为我们提供了一个即使对于立方对称的强关联电子系统也能达到基态的机会。配备长工作距离显微镜的同轴样品监测系统使我们能够在旋转过程前后持续测量样品表面上的同一区域。结合这个样品监测系统与微聚焦X射线束的装置的椭球Kirkpatrick-Baez镜(25 $μ$ m $\times$ 25 $μ$ m(FWHM)),我们已经证明了极化的价带HAXPES NiO的电压应用作为电阻随机存取存储器,以揭示起源的金属光谱重量附近的费米能级。

英文摘要:

We have developed a polarized hard X-ray photoemission (HAXPES) system to study the ground-state symmetry of strongly correlated materials. The linear polarization of the incoming X-ray beam is switched by the transmission-type phase retarder composed of two diamond (100) crystals. The best degree of the linear polarization $P_L$ is $-0.96$, containing the vertical polarization component of 98%. A newly developed low temperature two-axis manipulator enables easy polar and azimuthal rotations to select the detection direction of photoelectrons. The lowest temperature achieved is 9 K, offering us a chance to access the ground state even for the strongly correlated electron systems in cubic symmetry. The co-axial sample monitoring system with the long-working-distance microscope enables us to keep measuring the same region on the sample surface before and after rotation procedures. Combining this sample monitoring system with a micro-focused X-ray beam by means of an ellipsoidal Kirkpatrick-Baez mirror (25 $μ$m $\times$ 25 $μ$m (FWHM)), we have demonstrated the polarized valence-band HAXPES on NiO for voltage application as resistive random access memories to reveal the origin of the metallic spectral weight near the Fermi level.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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