晶体硅已被提议作为第三代引力波探测器（如爱因斯坦望远镜（ET））中的新测试质量材料。双折射会降低干涉仪的对比度，并在干涉仪中产生动态干扰。在这项工作中，我们使用的方法偏振相关的谐振频率分析的法布里-珀罗腔含有硅作为双折射介质。我们的测量表明，在室温下，在1550 nm的激光波长下，硅沿（111）轴的双折射为$Δ\, n \approx 10^{-7}$量级。提出了一个模型，解释了我们的测量作为一个叠加的弹性应变所造成的外部应力在样品和塑性应变可能在生产过程中产生的不同设置的结果。我们的理论上提出的ET测试质量的几何形状的应用表明，由于弹性应变的双折射没有关键的影响。
英文摘要：
Crystalline silicon has been proposed as a new test mass material in third generation gravitational wave detectors such as the Einstein Telescope (ET). Birefringence can reduce the interferometric contrast and can produce dynamical disturbances in interferometers. In this work we use the method of polarisation-dependent resonance frequency analysis of Fabry-Perot-cavities containing silicon as a birefringent medium. Our measurements show a birefringence of silicon along the (111) axis of the order of $Δ\, n \approx 10^{-7}$ at a laser wavelength of 1550nm and room temperature. A model is presented that explains the results of different settings of our measurements as a superposition of elastic strains caused by external stresses in the sample and plastic strains possibly generated during the production process. An application of our theory on the proposed ET test mass geometry suggests no critical effect on birefringence due to elastic strains.
Optical losses in pure crystalline silicon in the IR band measured using WGM microresonators
Russian Quantum Center（俄罗斯量子中心）；Moscow Institute of Physics and Technology（莫斯科物理技术学院）；Institute for Theoretical and Applied Electromagnetics, Russian Academy of Science（俄罗斯科学院理论与应用电磁学研究所）；Faculty of Physics, Lomonosov Moscow State University（莫斯科国立大学物理系）
Direct UV-written waveguides are fabricated in silica-on-silicon with birefringence of $(4.9 \pm 0.2) \times 10^{-4}$, much greater than previously reported in this platform. We show that these waveguides are suitable for the generation of heralded single photons at telecommunication wavelengths by spontaneous four-wave mixing. A pulsed pump field at 1060 nm generates pairs of photons in highly detuned, spectrally uncorrelated modes near 1550 nm and 800 nm. Waveguide-to-fiber coupling efficiencies of 78-91% are achieved for all fields. Waveguide birefringence is controlled through dopant conce…
The self-organised conical needles produced by plasma etching of silicon (Si), known as black silicon (b-Si), create a form-birefringent surface texture when etching of Si orientated at angles of $θ_i < 50 - 70^\circ$ (angle between the Si surface and vertical plasma E-field). The height of the needles in the form-birefringent region following 15~min etching was $d\sim 200$ nm and had a 100 $μ$m width of the optical retardance/birefringence, characterised using polariscopy. The height of the b-Si needles corresponds closely to the skin-depth of Si $\simλ/4$ for the visible spectral range. Refl…
We present the generation of high order harmonics in crystalline silicon subjected to intense near-infrared 30fs laser pulse. The harmonic spectrum extends from the near infrared to the extreme ultraviolet spectral region. Depending on the pulsed laser intensity, we distinguish two regimes of harmonic generation: (i) perturbative regime: electron-hole pairs born during each half-cycle of the laser pulse via multiphoton and tunnel transitions are accelerated in the laser electric field and gain kinetic energy; the electron-hole pairs then recombine in the ground state by emitting a single high-…
State-of-the-art optical oscillators employing cryogenic reference cavities are limited in performance by the Brownian thermal noise associated with the mechanical dissipation of the mirror coatings. Recently, crystalline Al$_{1-x}$Ga$_{x}$As/GaAs coatings have emerged as a promising candidate for improved coating thermal noise. We present measurements of the frequency noise of two fully crystalline cryogenic reference cavities with Al$_{0.92}$Ga$_{0.08}$As/GaAs optical coatings. We report on previously unmeasured birefringent noise associated with anti-correlated frequency fluctuations betwee…
We investigate the non-linear response and energy absorption in bulk silicon irradiated by intense 12-fs near-infrared laser pulses. Depending on the laser intensity, we distinguish two regimes of non-linear absorption of the laser energy: for low intensities, energy deposition and photoionization involve perturbative three-photon transition through the direct bandgap of silicon. For laser intensities near and above 10$^{14}$ W/cm$^2$, corresponding to photocarrier density of order 10$^{22}$ cm$^{-3}$, we find that absorption at near-infrared wavelengths is greatly enhanced due to excitation o…
While various nanophotonic structures applicable to relatively thin crystalline silicon-based solar cells were proposed to ensure effective light in-coupling and light trapping in the absorber, it is of great importance to evaluate their performance on the solar module level under realistic irradiation conditions. Here, we analyze the annual energy yield of relatively thin heterojunction (HJT) solar module architectures when optimized anti-reflective and light trapping titanium dioxide (TiO$_2$) nanodisk square arrays are applied on the front and rear cell interfaces. Our numerical study shows…
Crystalline optical cavities are the foundation of today's state-of-the-art ultrastable lasers. Building on our previous silicon cavity effort, we now achieve the fundamental thermal noise-limited stability for a 6 cm long silicon cavity cooled to 4 Kelvin, reaching $6.5\times10^{-17}$ from 0.8 to 80 seconds. We also report for the first time a clear linear dependence of the cavity frequency drift on the incident optical power. The lowest fractional frequency drift of $-3\times10^{-19}$/s is attained at a transmitted power of 40 nW, with an extrapolated drift approaching zero in the absence of…
Broadband absorption enhancement in ultra-thin crystalline Si solar cells by incorporating metallic and dielectric nanostructures in the back reflector
