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arXiv 1504.06220cond-mat.mes-hallcond-mat.mtrl-sci
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GaSe纳米实验室中的光学自旋极化动力学

Optical Spin Polarization Dynamics in GaSe Nanoslabs

Yanhao Tang, Wei Xie, Krishna C. Mandal, John A. McGuire, Chih-Wei Lai

摘要:

我们报告几乎完全保存的“自旋记忆”之间的光吸收和光致发光(PL)在纳米板的GaSe泵浦高达0.2 eV的过剩能量。在低温下,PL的圆极化($ρ_0$)的初始程度接近统一,与自旋极化的主要部分衰减的时间常数$>$ 500 ps在亚100 nm的GaSe纳米实验室。即使在室温下,也观察到高达0.7的$ρ_0$,而在带边以上泵浦1 eV产生$ρ_0$ = 0.15。电子和空穴的角动量保持是由于非简并导带和价带与其他带的分离。与原子级薄的过渡金属二硫属化物中的谷极化相反,这里光学自旋极化被保留在100层或更多层的GaSe的纳米实验室中。

英文摘要:

We report nearly complete preservation of "spin memory" between optical absorption and photoluminescence (PL) in nanometer slabs of GaSe pumped with up to 0.2 eV excess energy. At cryogenic temperatures, the initial degree of circular polarization ($ρ_0$) of PL approaches unity, with the major fraction of the spin polarization decaying with a time constant $>$500 ps in sub-100-nm GaSe nanoslabs. Even at room temperature, $ρ_0$ as large as 0.7 is observed, while pumping 1 eV above the band edge yields $ρ_0$ = 0.15. Angular momentum preservation for both electrons and holes is due to the separation of the non-degenerate conduction and valence bands from other bands. In contrast to valley polarization in atomically thin transition metal dichalcogenides, here optical spin polarization is preserved in nanoslabs of 100 layers or more of GaSe.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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