超宽电调谐高电子迁移率晶体管结构子带间共振与THz超材料的强耦合
Strong Coupling of Intersubband Resonance in a High Electron Mobility Transistor Structure to a THz Metamaterial by Ultrawide Electrical Tuning
摘要：
子带间共振（ISR）和超材料微腔之间的相互作用可以形成一个强耦合系统，其中新的共振形式取决于耦合强度。在这里，我们提出了实验证据的太赫兹超材料的腔谐振和ISR在高电子迁移率晶体管结构与三角形限制之间的强耦合。通过调整具有外延生长的透明栅极的ISR，该器件从非耦合到强耦合状态进行电切换。异质结构中的非对称三角势使得ISR的超宽电调谐成为可能，与等效方阱相比，ISR的电调谐高一个数量级。对于单个三角形阱，我们实现了0.52 THz的耦合强度，归一化耦合比为0.26。
英文摘要：
The interaction between intersubband resonances (ISRs) and metamaterial microcavities can form a strongly coupled system where new resonances form that depend on the coupling strength. Here we present experimental evidence of strong coupling between the cavity resonance of a THz metamaterial and the ISR in a high electron mobility transistor structure with a triangular confinement. The device is electrically switched from an uncoupled to a strongly coupled regime by tuning the ISR with epitaxially grown transparent gates. An asymmetric triangular potential in the heterostructure enables ultrawide electrical tuning of ISR which is an order of magnitude higher as compared to the equivalent square well. For a single triangular well, we achieve a coupling strength of 0.52 THz, with a normalized coupling ratio of 0.26.
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