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arXiv 1504.02149cond-mat.mes-hall
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温度可调半导体超材料

Temperature-tunable semiconductor metamaterial

Kirill L. Koshelev, Andrey A. Bogdanov

摘要:

我们提出了一类新型的温度可调半导体超材料,表现出负折射的太赫兹光谱范围。这些超材料是基于杂质半导体超晶格,其势垒厚度约为1 nm。由于势垒的隧道透明性,超晶格的层不能被认为是孤立的,因此,经典的均匀化方法是不适用的。我们发展了一个量子均匀化理论,它是基于久保公式的电导率。所提出的方法考虑了载波的波函数、它们的分布函数和能量谱。我们表明,半导体超材料的介电张量的组件可以有效地操纵外部温度和拓扑结构的超材料可以观察到在室温下从介电到双曲制度的转变。以GaAs/Al $_{0.3}$ Ga $_{0.7}$ As超晶格平板为例,对实验进行了数值模拟,结果表明平板的反射光谱中可以观察到拓扑结构的转变.

英文摘要:

We propose a novel class of temperature-tunable semiconductor metamaterials that exhibit negative refraction in the terahertz spectral range. These metamaterials are based on doped semiconductor superlattices with ultrathin barriers of about 1 nm thickness. Due to the tunnel transparency of the barriers, layers of the superlattice cannot be considered as isolated and, therefore, the classical homogenization approach is inapplicable. We develop a theory of quantum homogenization which is based on the Kubo formula for conductivity. The proposed approach takes into account the wave functions of the carriers, their distribution function and energy spectrum. We show that the components of the dielectric tensor of the semiconductor metamaterial can be efficiently manipulated by external temperature and a topological transition from the dielectric to hyperbolic regime of metamaterial can be observed at room temperature. Using a GaAs/Al$_{0.3}$Ga$_{0.7}$As superlattice slab as an example, we provide a numerical simulation of an experiment which shows that the topological transition can be observed in the reflection spectrum from the slab.

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