氩极紫外等离子体中电子密度的研究
Exploring the electron density in plasmas induced by extreme ultraviolet radiation in argon
摘要：
新一代光刻工具使用高能EUV辐射，其由于光电离而电离当前背景气体。为了预测和理解对高度精密的反射镜的长期影响，必须表征这类EUV诱导的等离子体。我们测量了氩气中的电子密度演化过程中，刚刚在13.5 nm的EUV光的短脉冲照射后，通过应用微波腔共振光谱。已经在与工业应用相关的范围内探索了EUV脉冲能量和气体压力的相关性。我们的实验结果表明，达到的最大电子密度线性依赖于脉冲能量。一个二次依赖性-所造成的光致电离和随后的电子碰撞电离的自由电子-被发现从实验中的气体压力是不同的。我们在这份手稿中提出的理论估计也证明了这一点。
英文摘要：
The new generation of lithography tools use high energy EUV radiation which ionizes the present background gas due to photoionization. To predict and understand the long term impact on the highly delicate mirrors It is essential to characterize these kinds of EUV-induced plasmas. We measured the electron density evolution in argon gas during and just after irradiation by a short pulse of EUV light at 13.5 nm by applying microwave cavity resonance spectroscopy. Dependencies on EUV pulse energy and gas pressure have been explored over a range relevant for industrial applications. Our experimental results show that the maximum reached electron density depends linearly on pulse energy. A quadratic dependence - caused by photoionization and subsequent electron impact ionization by free electrons - is found from experiments where the gas pressure is varied. This is demonstrated by our theoretical estimates presented in this manuscript as well.
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