Two-dimensional (2D) topological insulators (TIs), also known as quantum spin Hall (QSH) insulators, are excellent candidates for coherent spin transport related applications because the edge states of 2D TIs are robust against nonmagnetic impurities since the only available backscattering channel is forbidden. Currently, most known 2D TIs are based on a hexagonal (specifically, honeycomb) lattice. Here, we propose that there exists the quantum spin Hall effect (QSHE) in a buckled square lattice. Through performing global structure optimization, we predict a new three-layer quasi-2D (Q2D) structure which has the lowest energy among all structures with the thickness less than 6.0 Å for the BiF system. It is identified to be a Q2D TI with a large band gap (0.69 eV). The electronic states of the Q2D BiF system near the Fermi level are mainly contributed by the middle Bi square lattice, which are sandwiched by two inert BiF2 layers. This is beneficial since the interaction between a substrate and the Q2D material may not change the topological properties of the system, as we demonstrate in the case of the NaF substrate. Finally, we come up with a new tight-binding model for a two-orbital system with the buckled square lattice to explain the low-energy physics of the Q2D BiF material. Our study not only predicts a QSH insulator for realistic room temperature applications, but also provides a new lattice system for engineering topological states such as quantum anomalous Hall effect.
Elemental monolayers of the group 14 with a buckled honeycomb structure, namely silicene, germanene, stanene, and plumbene, are known to demonstrate a spin splitting as a result of an electric field parallel to their high symmetry axis which is capable of tuning their topological phase between a quantum spin Hall insulator and an ordinary band insulator. We perform first-principles calculations based on the density functional theory to quantify the spin-dependent band gaps and the spin splitting as a function of the applied electric field and extract the main coefficients of the invariant Hami…
Synthesis, crystal structure and magnetic properties of a new 2:1 ordered triple perovskite Sr3CaOs2O9 are reported. The compound crystallizes in P21/c space group and features a unique buckled honeycomb lattice of osmium. It exhibits long-range antiferromagnetic ordering with a high Neel temperature of 385 K as confirmed by susceptibility, heat capacity and neutron diffraction measurements and is electrically insulating. This compound is also the first example of a 2:1 ordered osmate perovskite. Theoretical investigations indicate that Sr3CaOs2O9 features a sizeable antiferromagnetic exchange…
The recently synthesized silicene as well as theoretically discussed germanene are examples of buckled honeycomb structures. The buckled structures allow one to manipulate asymmetry between two underlying sublattices of honeycomb structures. Here by taking germanene as a prototype of buckled honeycomb lattices, we explore magnetism induced by breaking sublattice symmetry through saturating chemical bonds on one-side of the buckled honeycomb lattice. It is shown that when fractions of chemical bonds on one-side are saturated, two narrow bands always exist at half filling. Furthermore, the narro…
A large bulk band gap is critical for the applications of quantum spin hall (QSH) insulators in spintronics at room temperature. Based on first-principles calculations, we predict that the methyl-functionalized III-Bi monolayers, namely III-Bi-(CH3)2 (III=Ga, In, Tl) thin films, own QSH states with band gap as large as 0.260, 0.304 and 0.843 eV, respectively, making them suitable for room-temperature applications. The topological characteristics are confirmed by s-px,y band inversion, topological invariant Z2, and the topologically protected edge states. Noticeably, for GaBi/InBi-(CH3)2 films,…
As a topological insulator, the quantum Hall (QH) effect is indexed by the Chern and spin-Chern numbers $\mathcal{C}$ and $\mathcal{C}_{\text{spin}}$. We have only $\mathcal{C}_{\text{spin}}=0$ or $\pm \frac{1}{2}$ in conventional QH systems. We investigate QH effects in generic monolayer honeycomb systems. We search for spin-resolved characteristic patterns by exploring Hofstadter's butterfly diagrams in the lattice theory and fan diagrams in the low-energy Dirac theory. The Chern and spin-Chern numbers are calculated based on the bulk-edge correspondence in the lattice theory and on the Kubo…
After establishing the fundamental understanding and the high throughput topological characterization of nearly all inorganic three-dimensional materials, the general interest and the demand of functional applications drive the research of topological insulators to the exploration of systems with a more robust topological nature and fewer fabrication challenges. The successful demonstration of the room-temperature quantum spin Hall (QSH) states in bismuthene/SiC(0001), thus, triggers the search of two-dimensional topological systems that are experimentally easy to access and of even larger top…
Chiral edge modes inherent to the topological quantum anomalous Hall (QAH) effect are a pivotal topic of contemporary condensed matter research aiming at future quantum technology and application in spintronics. A large topological gap is vital to protecting against thermal fluctuations and thus enabling a higher operating temperature. From first-principle calculations, we propose Al$_{2}$O$_{3}$ as an ideal substrate for atomic monolayers consisting of Bi and group-III elements, in which a large-gap quantum spin Hall effect can be realized. Additional half-passivation with nitrogen then sugge…
Stanene has been predicted to be a two-dimensional topological insulator (2DTI). Its low-buckled atomic geometry and the enhanced spin-orbit coupling are expected to cause a prominent quantum spin hall (QSH) effect. However, most of the experimentally grown stanene to date displays a metallic state without a real gap, possibly due to the chemical coupling with the substrate and the stress applied by the substrate. Here,we demonstrate an efficient way of tuning the atomic buckling in stanene to open a topologically nontrivial energy gap. Via tuning the growth kinetics, we obtain not only the lo…
We study the magnetic response of buckled honeycomb-lattice materials. The buckling breaks the sublattice symmetry, enhances the spin-orbit coupling, and allows the tuning of a topological quantum phase transition. As a result, there are two doubly degenerate spin-valley coupled massive Dirac bands, which exhibit an unconventional Hall plateau sequence under strong magnetic fields. We show how to externally control the splitting of anomalous zeroth Landau levels, the prominent Landau level crossing effects, and the polarizations of spin, valley, and sublattice degrees of freedom. In particular…
Combining tight-binding (TB) models with first-principles calculations, we investigate electronic and topological properties of plumbene. Different from the other two-dimensional (2D) topologically nontrivial insulators in group IVA (from graphene to stanene), low-buckled plumbene is a topologically trivial insulator. The plumbene without spin-orbit coupling exhibits simultaneously two kinds of degeneracies, i.e., quadratic non-Dirac and linear Dirac band dispersions around the Γand K/K' points, respectively. Our TB model calculations show that it is the coupling between the two topological st…
Novel 2D Altermagnetic Vanadium Oxide with a Buckled Lieb Structure
UNAM - National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University（比尔肯特大学纳米技术与材料科学研究所）；Linköping University（林雪平大学）；Uppsala University（乌普萨拉大学）；University of Iowa（爱荷华大学）
基于密度泛函理论第一性原理计算，发现单层V₂O晶体在翘曲Lieb晶格中是一种二维交变磁性材料，具有负泊松比、面外易磁化轴、1.2 eV动量依赖自旋劈裂以及大贝里曲率和约40 (ℏ/e) S cm⁻¹的自旋霍尔电导率。
Reversible spin Hall effect comprising the "direct" and "inverse" spin Hall effects was successfully detected at room temperature. This experimental demonstration proves the fundamental relations called Onsager reciprocal relations between spin and charge currents. A platinum wire with a strong spin-orbit interaction is used not only as a spin current absorber but also as a spin current source in the present lateral structure specially designed for clear detection of both charge and spin accumulations via the spin-orbit interaction. The obtained spin Hall conductivity is much larger than the r…
To obtain room temperature ferromagnetic semiconductors is one of big challenges in science, and also premises essentially to realize room temperature quantum anomalous Hall effect (QAHE), both of which are quite expected for a long time. Here we report that, based on first-principles calculations, PdBr3, PtBr3, PdI3 and PtI3 monolayers are ferromagnetic semiconductors with possible high temperature QAHE. Monte Carlo simulations give Curie temperatures 350 K and 375 K for PdBr3 and PtBr3 monolayers, respectively. These two-dimensional (2D) materials are Chern insulators. The band gaps of PdBr3…
Two-dimensional quantum spin Hall (QSH) insulators with reasonably wide band gaps are imperative for the development of various innovative technologies. Through systematic density functional calculations and tight-binding simulations, we found that stanene on α-alumina surface may possess a sizeable topologically nontrivial band gap (~0.25 eV) at the Γ point. Furthermore, stanene is atomically bonded to but electronically decoupled from the substrate, providing high structural stability and isolated QSH states to a large extent. The underlying physical mechanism is rather general, and this fin…
Room temperature intrinsic anomalous Hall effect in disordered half-metallic ferromagnetic quaternary Heusler alloy CoRuFeSi
National Institute of Technology Andhra Pradesh（安得拉邦国立技术学院）；Indian Institute of Technology Hyderabad（海德拉巴印度理工学院）；Institute of Low Temperature and Structure Research, Polish Academy of Sciences（波兰科学院低温结构研究所）；Indian Institute of Technology Kanpur（坎普尔印度理工学院）；UGC-DAE Consortium for Scientific Research, Kolkata Centre（UGC-DAE科学研究中心加尔各答中心）
Dominant in-plane anomalous Hall effect in a monoclinic room-temperature ferromagnet
California Institute of Technology（加州理工学院）；University of Rochester（罗切斯特大学）；University of Tokyo（东京大学）；High Energy Accelerator Research Organization（高能加速器研究机构）；RIKEN Center for Emergent Matter Science（理化学研究所新兴物质科学中心）
The nonlinear Hall effect (NLHE), which can produce a transverse voltage without any magnetic field, is a potential alternative for rectification or frequency doubling. However, the low temperature detection of NLHE limits its applications. Here, we report the room-temperature NLHE in a type-II Weyl semimetal TaIrTe4, which hosts a robust NLHE due to substantial broken inversion symmetry and large band overlapping at the Fermi level. We also observe a temperature-induced sign inversion of NLHE in TaIrTe4. Our theoretical calculations suggest that the observed sign inversion is a result of temp…
Recently, this long-sought quantum anomalous Hall effect was realized in the magnetic topological insulator. However, the requirement of an extremely low temperature (approximately 30 mK) hinders realistic applications. Based on \textit{ab-initio} band structure calculations, we propose a quantum anomalous Hall platform with a large energy gap of 0.34 and 0.06 eV on honeycomb lattices comprised of Sn and Ge, respectively. The ferromagnetic order forms in one sublattice of the honeycomb structure by controlling the surface functionalization rather than dilute magnetic doping, which is expected …
Antiferromagnetic spin motion at terahertz (THz) frequencies attracts growing interests for fast spintronics, however their smaller responses to external field inhibit device application. Recently the noncollinear antiferromagnet Mn$_3$Sn, a Weyl semimetal candidate, was reported to show large anomalous Hall effect (AHE) at room temperature comparable to ferromagnets. Dynamical aspect of such large responses is an important issue to be clarified for future THz data processing. Here the THz anomalous Hall conductivity in Mn$_3$Sn thin films is investigated by polarization-resolved spectroscopy.…
We report measurement of terahertz anomalous Hall conductivity and Faraday rotation in the magnetic Weyl semimetal Co$_2$MnGa thin films as a function of the magnetic field, temperature and thickness, using time-domain terahertz spectroscopy. The terahertz conductivity shows a thickness-independent anomalous Hall conductivity of around 600 $Ω^{-1}\cdot cm^{-1}$ at room temperature, and it is also frequency-independent from 0.2-1.5 THz. The magnitude of the longitudinal and Hall conductivities, the weak spin-orbit coupling, and the very close positioning of Weyl points to the chemical potential…
Weyl semimetals (WSM) have been extensively studied due to their exotic properties such as topological surface states and anomalous transport phenomena. Their band structure topology is usually predetermined by material parameters and can hardly be manipulated once the material is formed. Their unique transport properties appear usually at very low temperature, which sets challenges for practical device applications. In this work, we demonstrate a way to modify the band topology via a weak magnetic field in a ferromagnetic topological semimetal, Co2MnAl, at room temperature. We observe a tunab…
Starting from the symmetry aspects and tight-binding method in combination with first-principles calculation, we systematically derive the low-energy effective Hamiltonian involving spin-orbit coupling (SOC) for silicene, which is very general because this Hamiltonian applies to not only the silicene itself but also the low-buckled counterparts of graphene for other group IVA elements Ge and Sn, as well as graphene when the structure returns to the planar geometry. The effective Hamitonian is the analogue to the first graphene quantum spin Hall effect (QSHE) Hamiltonian. Similar to graphene mo…
Combining tight-binding models and first principles calculations, we investigate the quantum anomalous Hall (QAH) effect induced by intrinsic spin-orbit coupling (SOC) in buckled honeycomb lattice with sp orbitals in an external exchange field. Detailed analysis reveals that nontrivial topological properties can arise utilizing not only spin but also orbital degrees of freedom in the strong SOC limit, when the bands acquire non-zero Chern numbers upon undergoing the so-called orbital purification. As a prototype of a buckled honeycomb lattice with strong SOC we choose the Bi(111) bilayer, anal…
Nearly-room-temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2
Renmin University of China（中国人民大学）；Anhui University（安徽大学）；Beijing University of Posts and Telecommunications（北京邮电大学）；Korea Institute of Science and Technology (KIST)（韩国科学技术院）
We have investigated magnetic and transport properties of the {\it kagomé-bilayer} ferromagnet Fe$_{3}$Sn$_{2}$. A soft ferromagnetism and a large anomalous Hall effect are observed. The saturated Hall resistivity of Fe$_{3}$Sn$_{2}$ is 3.2 $μΩ$cm at 300 K, which is almost 20 times higher than that of typical itinerant-ferromagnets such as Fe and Ni. The anomalous Hall coefficient $R_{\rm s}$ is 6.7$\times10^{-9}$ $Ω$cm/G at 300 K, which is three orders of magnitude larger than that of pure Fe. $R_{\rm s}$ obeys an unconventional scaling to the longitudinal resistivity, $ρ_{xx}$, of $R_{\rm s}…
Recent years have witnessed great interest in the quantum spin Hall effect (QSHE) which is a new quantum state of matter with nontrivial topological property due to the scientific importance as a novel quantum state and the technological applications in spintronics. Taking account of Si, Ge significant importance as semiconductor material and intense interest in the realization of QSHE for spintronics, here we investigate the spin-orbit opened energy gap and the band topology in recently synthesized silicene using first-principles calculations. We demonstrate that silicene with topologically n…
The advent of new-class of high-mobility semiconducting polymers opens up a window to address fundamental issues in electrical transport mechanism such as hopping between localized states versus extended state conduction. Here, we investigate the origin of ultra-low degree of disorder (~ 16 meV) and band-like negative temperature (T) coefficient of the field effect electron mobility in a high performance diketopyrrolopyrrole (DPP)-based semiconducting polymer. Models based on the framework of mobility edge (ME) with exponential density of states are invoked to explain the trends in transport. …
A Strategy Toward Room Temperature Topological Hall Effect via Local Moment Magnetism
Rice University（莱斯大学）；Boston College（波士顿学院）；University of Houston（休斯顿大学）；University of Maryland, College Park（马里兰大学帕克分校）；Canadian Institute for Advanced Research（加拿大高级研究所）
Quantum Spin Hall (QSH) insulators with a large topologically nontrivial bulk gap are crucial for future applications of the QSH effect. Among these, group III-V monolayers and their halides with chair structure (regular hexagonal framework, RHF) were widely studied. Using first-principles calculations, we propose a new structure model for the functionalized group III-V monolayers, which consist of rectangular GaBi-X2 (X=I, Br, Cl) monolayers with a distorted hexagonal framework (DHF). These structures have a much lower energy than the GaBi-X2 monolayers with chair structure. Remarkably, the D…
Two-dimensional (2D) group-III-V honeycomb films have attracted significant interest for their potential application in fields of quantum computing and nanoeletronics. Searching for 2D III-V films with high structural stability and large-gap are crucial for the realizations of dissipationless transport edge states using quantum spin Hall (QSH) effect. Based on first-principles calculations, we predict that the methyl-functionalized InBi monolayer (InBiCH3) has no dynamic instability, and host a QSH state with a band gap as large as 0.29 eV, exhibiting an interesting electronic behavior viable …
The spin Hall angle (SHA) is a measure of the efficiency with which a transverse spin current is generated from a charge current by the spin-orbit coupling and disorder in the spin Hall effect (SHE). In a study of the SHE for a Pt$|$Py (Py=Ni$_{80}$Fe$_{20}$) bilayer using a first-principles scattering approach, we find a SHA that increases monotonically with temperature and is proportional to the resistivity for bulk Pt. By decomposing the room temperature SHE and inverse SHE currents into bulk and interface terms, we discover a giant interface SHA that dominates the total inverse SHE current…
Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick films, the saturation magnetization and conductivity are respectively 453 emu/cm^3 and 225 1/(Ohm cm) at room temperature. The Verwey transition is at 117 K. The Hall effect indicates an electron concentration corresponding to 0.22 electrons per formula unit at room temperature. Normal and anomalous Hall effect both have a negative sign.
Magnetic topological semimetals are the manifestations of interplay between electronic and magnetic phases of the matter, leading to peculiar characteristics such as the anomalous Hall effect (AHE) and topological Hall effect (THE). Mn$_3$Sn is a time-reversal symmetry broken (TRS) magnetic Weyl semimetal showing topological characteristics within the Kagome lattice network. In this study, for the first time, we uncover large and pure topological Hall effect in Mn$_3$Sn at the room temperature, which is gradually suppressed by Fe doping at the Mn site of Mn$_{3-x}$Fe$_x$Sn. We further identify…
Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gated-Hall Mobility Exceeding 100 cm2/Vs at Room Temperature
We demonstrate dynamical spin injection into p-type germanium (Ge) at room temperature (RT) using spin pumping. The generated pure spin current is converted to a charge current by the inverse spin-Hall effect (ISHE) arising in the p-type Ge sample. A clear electromotive force due to the ISHE is detected at RT. The spin-Hall angle for p-type Ge is estimated to be θSHE = 2.6x10-3 at RT, which is much larger than that for p-type Si.
Room-temperature third-order nonlinear anomalous Hall effect in ferromagnetic metal Fe3GaTe2
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Physical Science Research Center, and School of Physics, Nanjing University（南京大学固体微结构物理国家重点实验室、先进微结构协同创新中心、江苏省物理科学研究中心和物理学院）；Institute of Atom Manufacturing, Nanjing University（南京大学原子制造研究所）；Nanjing Institute of Atomic Scale Manufacturing（南京原子尺度制造研究院）；Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Nanjing University（南京大学电子科学与工程学院、先进光子与电子材料江苏省重点实验室、自旋电子器件与技术国家重点实验室）；Center for Quantum Transport and Thermal Energy Science, School of Physics and Technology, Nanjing Normal University（南京师范大学物理科学与技术学院量子输运与热能科学中心）
Utilizing the first-principles density functional theory calculations together with group theory analyses, we systematically investigate the spin order-dependent magneto-optical effect (MOE), anomalous Hall effect (AHE), and anomalous Nernst effect (ANE) in a recently discovered two-dimensional room-temperature ferromagnet $1T$-CrTe$_2$. We find that the spin prefers an in-plane direction by the magnetocrystalline anisotropy energy calculations. The MOE, AHE, and ANE display a period of $2π/3$ when the spin rotates within the atomic plane, and they are forbidden if there exists a mirror plane …
Layered materials with robust magnetic ordering have been attracting significant research interest. In recent experiments, a new layered material 1$T$-CrTe$_{2}$ has been synthesized and exhibits ferromagnetism above the room temperature. Here, based on first-principles calculations, we investigate the electronic, magnetic, and transport properties of 1$T$-CrTe$_{2}$, both in the bulk and in the two-dimensional (2D) limit. We show that 1$T$-CrTe$_{2}$ can be stable in the monolayer form, and has a low exfoliation energy. The monolayer structure is an intrinsic ferromagnetic metal, which mainta…
Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a (Ga,Fe)Sb / BiSb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (TC) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,…
We observe the signature of zero-field ground-state skyrmions in BiSb topological insulator / MnGa bi-layers by using the topological Hall effect (THE). We observe a large critical interfacial Dzyaloshinskii-Moriya-Interaction energy (5.0 pJ/m) at the BiSb/MnGa interface that can be tailored by controlling the annealing temperature of the MnGa template. The THE was observed at room temperature even under absence of an external magnetic field, which gives the strong evidence for the existence of thermodynamically stable skyrmions in MnGa/BiSb bi-layers. Our results will give insight into the ro…
So far, several transition metal dichalcogenides (TMDCs) based two-dimensional (2D) topological insulators (TIs) have been discovered, all of them based on a tetragonal lattice. However, in 2D crystals, the hexagonal rather than the tetragonal symmetry is the most common motif. Here, based on first-principles calculations, we propose a new class of stable 2D TMDCs of composition MX2 (M=Mo, W, X=S, Se, Te) with a hexagonal lattice. They are all in the same stability range as other 2D TMDC allotropes that have been demonstrated experimentally, and they are identified to be practical 2D TIs with …
Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy. Transmission electron micrographs showed good crystal quality with individual Mn-containing layers well resolved; no evidence of 3D MnSb precipitates was seen in as-grown samples. All samples studied exhibited ferromagnetism with temperature dependent hysteresis loops in the magnetization accompanied by metallic p-type conductivity with a strong anomalous Hall effect (AHE) up to 400 K (limited by the experimental setup). The anomalous Hall effect shows hysteresis loops at low temperatures and above room temperature very …
By means of first-principles calculations, we predict a new 2D QSH insulator in the porous allotrope of Bismuth monolayer, bismuthylene, its dynamics stability being confirmed by phonon spectrum and molecular dynamics simulations. The analyses of electronic structures reveal that it is a native QSH state with a gap much as large as 0.29 eV at the Γ point, which is larger than the buckled (0.2 eV) and flattened (0.2 eV) bismuth, Bi4Br4 (0.18 eV), as well as stanene (0.1 eV), also more stable energetically than these systems. Interestingly, the bismuthylene has tunable band gaps and nontrivial b…
Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin-Hall effect (spin current generation) and inverse spin-Hall effect (spin current detection). Here, we undertake current, magnetic field, crystallography dependent magnetoresistance and magneto thermal transport measurements to study the spin transport behavior in freestanding Si thin films. We observe a large spin-Hall magnetoresistance in both p-Si and n-Si at room temperature and it is an order of magnitu…
Giant Surface-driven Nonlinear Hall Effect in BiTeCl at Room Temperature
State Key Laboratory of Micro-nano Engineering Science, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University（上海交通大学物理与天文学院，微纳工程科学国家重点实验室，人工结构与量子控制教育部重点实验室）；Tsung-Dao Lee Institute, Shanghai Jiao Tong University（上海交通大学李政道研究所）；College of Engineering Physics, Shenzhen Technology University（深圳技术大学工程物理学院）；Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University（上海交通大学物理与天文学院超快科学与技术中心）；Collaborative Innovation Center of Advanced Microstructures（先进微结构协同创新中心）
Electrically-induced electron spin polarization is imaged in n-type ZnSe epilayers using Kerr rotation spectroscopy. Despite no evidence for an electrically-induced internal magnetic field, current-induced in-plane spin polarization is observed with characteristic spin lifetimes that decrease with doping density. The spin Hall effect is also observed, indicated by an electrically-induced out-of-plane spin polarization with opposite sign for spins accumulating on opposite edges of the sample. The spin Hall conductivity is estimated as 3 +/- 1.5 Ohms**-1 m**-1/|e| at 20 K, which is consistent wi…
