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arXiv 1503.07952cond-mat.mes-hallcond-mat.dis-nn
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低维扩散运动载流子的超精细诱导自旋弛豫:有机半导体中自旋输运的意义

Hyperfine-induced spin relaxation of a diffusively moving carrier in low dimensions: implications for spin transport in organic semiconductors

V. V. Mkhitaryan, V. V. Dobrovitski

摘要:

载流子的自旋与核自旋浴之间的超精细耦合是许多有机半导体中载流子自旋弛豫的主要通道。我们从理论上研究了在有机半导体的典型传输机制中,载流子在d维规则晶格上进行随机行走时的超精细诱导自旋弛豫。我们表明,在d=1和d=2的时间依赖性的空间积分自旋极化,P(t),是占主导地位的超指数衰减,跨越到一个拉伸指数尾巴在很长的时间。更快的衰减归因于随机游走轨迹的多次自相交(返回),这种情况在较低维度中更常见。我们还表明,分析和数值,返回导致P(t)的敏感性,外部电场和磁场,这种敏感性强烈依赖于系统的维数(d=1与d=3)。此外,我们详细研究了时间积分自旋极化,$σ(r)$,这可以在自旋极化电极的自旋输运实验中探测的坐标依赖性。我们表明,虽然$σ(r)$基本上是指数的,多个自相交的效果可以确定在运输测量从外部磁场和电场的自旋衰减长度的强烈依赖。

英文摘要:

The hyperfine coupling between the spin of a charge carrier and the nuclear spin bath is a predominant channel for the carrier spin relaxation in many organic semiconductors. We theoretically investigate the hyperfine-induced spin relaxation of a carrier performing a random walk on a d-dimensional regular lattice, in a transport regime typical for organic semiconductors. We show that in d=1 and d=2 the time dependence of the space-integrated spin polarization, P(t), is dominated by a superexponential decay, crossing over to a stretched exponential tail at long times. The faster decay is attributed to multiple self-intersections (returns) of the random walk trajectories, which occur more often in lower dimensions. We also show, analytically and numerically, that the returns lead to sensitivity of P(t) to external electric and magnetic fields, and this sensitivity strongly depends on dimensionality of the system (d=1 vs. d=3). Furthermore, we investigate in detail the coordinate dependence of the time-integrated spin polarization, $σ(r)$, which can be probed in the spin transport experiments with spin-polarized electrodes. We demonstrate that, while $σ(r)$ is essentially exponential, the effect of multiple self-intersections can be identified in transport measurements from the strong dependence of the spin decay length on the external magnetic and electric fields.

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