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arXiv 1503.05778cond-mat.mtrl-sci
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等离子体激元极化子的能带结构

Band structures of plasmonic polarons

Fabio Caruso, Henry Lambert, Feliciano Giustino

摘要:

使用国家的最先进的多体计算的基础上的“GW加累积量”的方法,我们表明,电子等离激元相互作用导致出现等离激元极化子带的能带结构的常见半导体。使用硅和IV族过渡金属二硫属化物单层(AX2与A=Mo,W和X=S,Se)作为原型的例子,我们证明,这些新的频带是一个一般的功能系统,其特征在于定义良好的等离子体共振。我们发现,这些等离子体结构的能量与动量色散关系密切遵循标准价带,虽然他们出现扩大和蓝移的等离子体能量。基于我们的研究结果,我们确定了观察角分辨光电子谱的固体等离子体极化子带的一般标准。

英文摘要:

Using state-of-the-art many-body calculations based on the `GW plus cumulant' approach, we show that electron-plasmon interactions lead to the emergence of plasmonic polaron bands in the band structures of common semiconductors. Using silicon and group IV transition metal dichalcogenide monolayers (AX2 with A=Mo,W and X=S,Se) as prototypical examples, we demonstrate that these new bands are a general feature of systems characterized by well defined plasmon resonances. We find that the energy vs. momentum dispersion relations of these plasmonic structures closely follow the standard valence bands, although they appear broadened and blueshifted by the plasmon energy. Based on our results we identify general criteria for observing plasmonic polaron bands in the angle-resolved photoelectron spectra of solids.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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