硅烷催化下六方氮化硼上大单晶石墨烯的快速生长
Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride
摘要：
在电介质衬底上直接生长高质量的石墨烯大单晶畴对于电子和光电子学中的应用至关重要。传统上，在石墨烯上生长的石墨烯域通常仅为~ lnm，生长速率为~ lnm/min或更小，主要原因是缺乏催化剂。在这里，我们表明，硅烷，作为一种气态催化剂，是能够提高石墨烯的生长速率~1 μ m/min，从而促进石墨烯域的大小高达20 μ m的合成通过化学气相沉积在六方氮化硼。霍尔测量表明，样品在室温下的迁移率达到20，000 cm 2/Vs，这是CVD生长的石墨烯中最好的。结合催化CVD和超平介电衬底的优点，气相催化剂辅助CVD为合成用于器件应用的高质量石墨烯铺平了道路，同时避免了转移过程。
英文摘要：
The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 nm with a growth rate of ~1 nm/min or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 um/min, thereby promoting graphene domains up to 20 um in size to be synthesized via chemical vapor deposition on hexagonal boron nitride. Hall measurements show that the mobility of the sample reaches 20,000 cm2/Vs at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.
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