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arXiv 1502.07280cond-mat.mes-hall
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亚1 μeV线宽单层MoSe2中激子的布居脉动共振

Population pulsation resonances of excitons in monolayer MoSe2 with sub 1 μeV linewidth

John R. Schaibley, Todd Karin, Hongyi Yu, Jason S. Ross, Pasqual Rivera, Aaron M. Jones, Marie E. Scott, Jiaqiang Yan, D. G. Mandrus, Wang Yao, Kai-Mei Fu, Xiaodong Xu

摘要:

过渡金属二硫属化物单层膜是一类新型的原子薄半导体材料,具有光耦合的二维谷激子。这些系统中激子弛豫的性质目前知之甚少。在这里,我们研究激子弛豫单层MoSe 2使用偏振分辨相干非线性光学光谱与高光谱分辨率。我们报道了在低温下具有1 μeV和<0.2 μeV两种不同特征线宽的极窄的布居脉动共振。这些线宽比光致发光和吸收线宽窄三个数量级以上,表明激子弛豫动力学的一个组成部分发生在长于1 ns的时间尺度上。超窄共振(<0.2 μeV)随着激发强度的增加而出现,这意味着存在寿命超过6ns的长寿命态。

英文摘要:

Monolayer transition metal dichalcogenides, a new class of atomically thin semiconductors, possess optically coupled 2D valley excitons. The nature of exciton relaxation in these systems is currently poorly understood. Here, we investigate exciton relaxation in monolayer MoSe2 using polarization-resolved coherent nonlinear optical spectroscopy with high spectral resolution. We report strikingly narrow population pulsation resonances with two different characteristic linewidths of 1 μeV and <0.2 μeV at low-temperature. These linewidths are more than three orders of magnitude narrower than the photoluminescence and absorption linewidth, and indicate that a component of the exciton relaxation dynamics occurs on timescales longer than 1 ns. The ultra-narrow resonance (<0.2 μeV) emerges with increasing excitation intensity, and implies the existence of a long-lived state whose lifetime exceeds 6 ns.

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