纳米垂直有机自旋阀
Nanosized Vertical Organic Spin-Valves
摘要：
垂直有机自旋阀器件的制造工艺已经开发出来，它提供了实现小于500 × 500 nm^2的有源器件面积的可能性，并且在有源层的材料选择方面是灵活的。所得到的设备的表征示出了有时超过100%的大的磁阻，然而从设备到设备具有同样大的变化。与大面积自旋阀的比较表明，无论是大的和小的设备的磁电阻最有可能来源于隧道通过针孔和隧道磁电阻。
英文摘要：
A fabrication process for vertical organic spin-valve devices has been developed which offers the possibility to achieve active device areas of less than 500x500 nm^2 and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large-area spin-valves indicates that the magnetoresistance of both, large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
