门控二维电子系统中新的相对论等离子体激发
Novel relativistic plasma excitations in a gated two-dimensional electron system
摘要：
在相对论条件下研究了导电顶栅覆盖下二维电子系统的微波响应，二维电导率为$σ_{2 \rm{D}} > c/2π$。弱阻尼等离子体波被激发在门控区域的2DES。由此产生的等离子体激发的频率和幅度显示出非常不寻常的依赖于磁场，电导率，栅极几何形状和从2DES的分离。我们表明，这种相对论性等离子体生存的温度高达300 K，允许新的室温微波和太赫兹应用。
英文摘要：
The microwave response of a two-dimensional electron system (2DES) covered by a conducting top gate is investigated in the relativistic regime for which the 2D conductivity $σ_{2 \rm{D}} > c/2π$. Weakly damped plasma waves are excited in the gated region of the 2DES. The frequency and amplitude of the resulting plasma excitations show a very unusual dependence on the magnetic field, conductivity, gate geometry and separation from the 2DES. We show that such relativistic plasmons survive for temperatures up to 300 K, allowing for new room-temperature microwave and terahertz applications.
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