SRAM FPGA中瞬态电离辐射引起的额外组合延迟的电路级建模
Circuit Level Modeling of Extra Combinational Delays in SRAM FPGAs Due to Transient Ionizing Radiation
摘要：
本文提出了一种新的电路级模型，解释和证实了额外的组合延迟在SRAM FPGA（Virtex-5）由于辐射，这与质子辐照在TRIUMF的实验结果相匹配。
英文摘要：
This paper presents a novel circuit level model that explains and confirms the extra combinational delays in a SRAM-FPGA (Virtex-5) due to radiation, which matches the experimental results by proton irradiation at TRIUMF.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
