用Rényi-Wehrl熵确定硅烯和其他二维带隙Dirac材料的拓扑带绝缘体跃迁
Identifying topological-band insulator transitions in silicene and other 2D gapped Dirac materials by means of Rényi-Wehrl entropy
摘要：
我们提出了一种新的方法来识别硅烯（石墨烯的硅等价物）中的拓扑绝缘体到能带绝缘体的转变，在存在垂直磁场和电场的情况下，通过使用相空间中量子态的Rényi-Wehrl熵。电子-空穴熵在任意朗道能级的电荷中性点处都表现出反转/交叉行为，粒子和空穴的综合熵在此临界点处最大。用相空间中量子态的离域性解释了这一结果。在这项工作中提出的熵描述将是有效的一般二维带隙狄拉克材料，具有较强的内在自旋轨道相互作用，与硅烯等构。
英文摘要：
We propose a new method to identify transitions from a topological insulator to a band insulator in silicene (the silicon equivalent of graphene) in the presence of perpendicular magnetic and electric fields, by using the Rényi-Wehrl entropy of the quantum state in phase space. Electron-hole entropies display an inversion/crossing behavior at the charge neutrality point for any Landau level, and the combined entropy of particles plus holes turns out to be maximum at this critical point. The result is interpreted in terms of delocalization of the quantum state in phase space. The entropic description presented in this work will be valid in general 2D gapped Dirac materials, with a strong intrinsic spin-orbit interaction, isoestructural with silicene.
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