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arXiv 1502.02273cond-mat.supr-con
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欠掺杂高T_c铜氧化物超导体中费米表面曲率导致霍尔系数符号的变化

Change in sign of the Hall coefficient from Fermi surface curvature in underdoped high Tc copper oxide superconductors

N. Harrison, S. E. Sebastian

摘要:

最近有人提出,低掺杂的高Tc氧化铜材料的费米面内的电荷有序制度由一个菱形的电子口袋构造的弧连接在顶点。在这里,我们表明,在这样的费米面使用肖克利-钱伯斯管积分方法和均匀的散射时间的面内磁输运建模,可以理解的几个关键特征的正常状态的面内运输的欠掺杂的氧化铜系统。这些效应包括霍尔系数的符号反转、正磁阻效应和霍尔系数的磁量子振荡。

英文摘要:

It has recently been proposed that the Fermi surface of underdoped high Tc copper oxide materials within the charge-ordered regime consists of a diamond-shaped electron pocket constructed from arcs connected at vertices. We show here that on modeling the in-plane magnetotransport of such a Fermi surface using the Shockley-Chambers tube integral approach and a uniform scattering time, several key features of the normal state in-plane transport of the underdoped copper oxide systems can be understood. These include the sign reversal in the Hall coefficient, the positive magnetoresistance and magnetic quantum oscillations in the Hall coefficient.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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