WTe2中对反常磁电阻的完全电荷补偿：从体膜到单层膜
Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer
摘要：
用第一性原理计算研究了WTe 2体和层的电子结构。在WTe 2体中发现了完美的电子-空穴（n-p）电荷补偿和高载流子迁移率，这可能导致最近在实验中观察到的大的和非饱和的磁阻（MR）[Ali等人，Nature 514，205（2014）]。WTe 2的单层和双层保持半金属性质，具有相同的空穴和电子载流子浓度。此外，在WTe 2单分子层中也发现了非常高的载流子迁移率，这表明WTe 2单分子层将具有与体材料相同的非凡MR效应，这在纳米结构磁性器件中具有很好的应用前景。
英文摘要：
The electronic structure of WTe2 bulk and layers are investigated by using the first principles calculations. The perfect electron-hole (n-p) charge compensation and high carrier mobilities are found in WTe2 bulk, which may result in the large and non-saturating magnetoresistance (MR) observed very recently in the experiment [Ali et al., Nature 514, 205 (2014)]. The monolayer and bilayer of WTe2 preserve the semimetallic property, with the equal hole and electron carrier concentrations. Moreover, the very high carrier mobilities are also found in WTe2 monolayer, indicating that the WTe2 monolayer would have the same extraordinary MR effect as the bulk, which could have promising applications in nanostructured magnetic devices.
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