高注入区电子束感应电流
Electron beam induced current in the high injection regime
摘要：
电子束感应电流（EBIC）是一种测量光子晶体电荷收集效率的有效方法，具有亚微米空间分辨率。激发电子束导致高的电子-空穴对产生率密度，这可能会驱动系统进入非线性区域。提出了一个分析模型，它描述了EBIC响应时的{ \it总}电子空穴对产生率超过载流子被提取的光电池的速率，电荷积累和筛选发生。该模型提供了一个简单的估计的发病高注入制度的材料电阻率和厚度，并提供了一个简单的方法来预测EBIC线型在高注入制度。该模型进行了验证，通过比较其预测数值模拟在1和2维。实验数据的特征，如最大收集效率的大小和位置与电子束流的关系，与三维模型一致。
英文摘要：
Electron beam induced current (EBIC) is a powerful technique which measures the charge collection efficiency of photovoltaics with sub-micron spatial resolution. The exciting electron beam results in a high generation rate density of electron-hole pairs, which may drive the system into nonlinear regimes. An analytic model is presented which describes the EBIC response when the {\it total} electron-hole pair generation rate exceeds the rate at which carriers are extracted by the photovoltaic cell, and charge accumulation and screening occur. The model provides a simple estimate of the onset of the high injection regime in terms of the material resistivity and thickness, and provides a straightforward way to predict the EBIC lineshape in the high injection regime. The model is verified by comparing its predictions to numerical simulations in 1 and 2 dimensions. Features of the experimental data, such as the magnitude and position of maximum collection efficiency versus electron beam current, are consistent with the 3 dimensional model.
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