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arXiv 1409.7283nlin.AOcond-mat.mes-hallnlin.PSphysics.comp-ph
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半绝缘GaAs二能级模型的高分辨率参数空间

High Resolution Parameter Space from a Two Level Model on Semi-Insulating GaAs

S. L. da Silva, E. R. Viana, A. G. de Oliveira, G. M. Ribeiro, R. L. da Silva

摘要:

半绝缘砷化镓(SI-GaAs)样品在实验中显示,在高电场下,甚至在室温下,都具有N形形式的负微分电导率(NNDC)。自从E. Scholl无法生成SI-GaAs的NNDC曲线,在这项工作中,我们提出了一种替代模型。所提出的“双谷模型”是基于导带内两个谷的产生复合方程的最小集合和作为所施加电场的函数的漂移速度的方程,其涵盖了SI-GaAs系统的非线性导电的物理性质。“双谷模型”能够第一次在理论上生成NNDC区域,并且有了它,我们能够使用周期性检测(PD)例程构建高分辨率的周期性参数空间(PSP)。在参数空间中,观察到自组织周期结构沉浸在混沌区域。复杂区域呈现为围绕焦点旋转的“虾”形状,其在大尺度上形成“蜗牛壳”形状,不同“虾”之间具有错综复杂的连接。参数空间上的详细信息的知识是至关重要的本地化的光滑和连续的混沌宽区域。

英文摘要:

Semi-insulating Gallium Arsenide (SI-GaAs) samples experimentally show, under high electric fields and even at room temperature, negative differential conductivity in N-shaped form (NNDC). Since the most consolidated model for n-GaAs, namely, "the model", proposed by E. Scholl was not capable to generate the NNDC curve for SI-GaAs, in this work we proposed an alternative model. The model proposed, "the two-valley model" is based on the minimal set of generation recombination equations for two valleys inside of the conduction band, and an equation for the drift velocity as a function of the applied electric field, that covers the physical properties of the nonlinear electrical conduction of the SI-GaAs system. The "two valley model" was capable to generate theoretically the NNDC region for the first time, and with that, we were able to build a high resolution parameter-space of the periodicity (PSP) using a Periodicity-Detection (PD) routine. In the parameter space were observed self-organized periodic structures immersed in chaotic regions. The complex regions are presented in a "shrimp" shape rotated around a focal point, which forms in large-scale a "snail shell" shape, with intricate connections between different "shrimps". The knowledge of detailed information on parameter spaces is crucial to localize wide regions of smooth and continuous chaos.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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