Brooks-Herring屏蔽势的非线性添加剂
Non-linear additives to the Brooks-Herring screened potential
摘要：
在目前的工作中，我们计算的非线性添加剂的Brooks-Herring静电屏蔽电位。我们还计算了相应的添加剂的电离杂质散射迁移率在n-GaAs在很宽的掺杂水平和温度范围内。它表明，添加剂的流动性改变其值高达50%。当掺杂浓度约为$10^{14}$ - $2\times10^{16}$ cm $^{-3}$，温度低于50 K时，迁移率在Mott转变附近变化最大。此外，结果允许我们得出结论，非线性添加剂打破了截面对称性相对于的符号的电荷的散射中心。
英文摘要：
In the present work we calculate the non-linear additives to the Brooks-Herring electrostatic screened potential. We also calculate the corresponding additives to the ionized impurity scattering mobility in n-GaAs over a wide range of doping levels and temperatures. It is demonstrated that the additives to the mobility changes its value up to 50%. The most dramatically mobility is changed near the Mott transition, when the doping level is about $10^{14}$ - $2\times10^{16}$ cm$^{-3}$ and temperature is below 50 K. Also, the results allow us to conclude that the non-linear additives break the cross section symmetry with respect to the sign of the charge of the scattering center.
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