基于OTA的200 GΩ电阻，700 μm2，180 nm CMOS，用于神经形态应用
OTA based 200 GΩ resistance on 700 μm2 in 180 nm CMOS for neuromorphic applications
摘要：
生成具有数百毫秒量级的时间常数的指数衰减函数是神经形态电路的支柱。通常，使用亚阈值电路或基于CMOS放大器的RC衰减。在后一种情况下，需要10 pS范围内的跨导。然而，最先进的低功耗放大器仍然需要太多的电路面积，以适用于神经形态电路，其中在单个芯片上可能需要>100个这些时间常数电路。我们提出了一个硅验证的运算放大器，实现了5 pS的gm在只有700 μm2，一个因素的10-100比目前的例子减少面积。这允许时间常数电路在目标应用中的高密度集成，例如突触学习或作为神经形态忆阻器阵列的驱动电路。
英文摘要：
Generating an exponential decay function with a time constant on the order of hundreds of milliseconds is a mainstay for neuromorphic circuits. Usually, either subthreshold circuits or RC-decays based on transconductance amplifiers are used. In the latter case, transconductances in the 10 pS range are needed. However, state-of-the-art low-transconductance amplifiers still require too much circuit area to be applicable in neuromorphic circuits where >100 of these time constant circuits may be required on a single chip. We present a silicon verified operational transconductance amplifier that achieves a gm of 5 pS in only 700 μm2, a factor of 10-100 less area than current examples. This allows a high-density integration of time constant circuits in target appliations such as synaptic learning or as driving circuit for neuromorphic memristor arrays.
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