相干控制中受激电子喇曼散射与线性吸收的干涉
Interference of stimulated electronic Raman scattering and linear absorption in coherent control
摘要：
我们考虑量子干涉效应的载流子和光电流激发在石墨烯使用相干电磁场分量在频率$ω$和$2ω$。在基频$ω$的材料的响应，它示出，在$ω$的单光子吸收干扰受激电子拉曼散射（结合$2ω$吸收和$ω$发射），导致在电流注入的净贡献。这种干扰与$\hbarω$的净能量吸收一起发生，并且除了先前研究的在相同照射条件下与$2\hbarω$的净能量吸收一起发生的干扰之外，还存在这种干扰。由于没有带隙，并且可以通过调节费米能级来阻止光子吸收，石墨烯是研究这种贡献的理想材料。我们计算了本征石墨烯的这种全光效应的偏振依赖性，并表明在$ω$和$2ω$的材料的组合响应导致各向异性的光电流注入，而在掺杂的石墨烯的注入电流的大小，当在$ω$的转换被泡利阻止，是各向同性的。通过考虑受激电子拉曼散射对相干电流控制的贡献，我们发现石墨烯提供了可调谐的偏振敏感应用。由于受激电子拉曼散射和线性吸收的干涉引起的相干控制不仅与石墨烯相关，而且与窄隙半导体、拓扑绝缘体和金属相关。
英文摘要：
We consider quantum interference effects in carrier and photocurrent excitation in graphene using coherent electromagnetic field components at frequencies $ω$ and $2ω$. The response of the material at the fundamental frequency $ω$ is presented, and it is shown that one-photon absorption at $ω$ interferes with stimulated electronic Raman scattering (combined $2ω$ absorption and $ω$ emission) to result in a net contribution to the current injection. This interference occurs with a net energy absorption of $\hbarω$ and exists in addition to the previously studied interference occurring with a net energy absorption of $2\hbarω$ under the same irradiation conditions. Due to the absence of a bandgap and the possibility to block photon absorption by tuning the Fermi level, graphene is the perfect material to study this contribution. We calculate the polarization dependence of this all-optical effect for intrinsic graphene and show that the combined response of the material at both $ω$ and $2ω$ leads to an anisotropic photocurrent injection, whereas the magnitude of the injection current in doped graphene, when transitions at $ω$ are Pauli blocked, is isotropic. By considering the contribution to coherent current control from stimulated electronic Raman scattering, we find that graphene offers tunable, polarization sensitive applications. Coherent control due to the interference of stimulated electronic Raman scattering and linear absorption is relevant not only for graphene but also for narrow-gap semiconductors, topological insulators, and metals.
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