IV族铁磁半导体GeFe的性质：生长温度、晶格常数、Fe原子位置及其与磁性的关系
Properties of group-IV-based ferromagnetic semiconductor GeFe: Growth temperature dependence, lattice constant, location of Fe atoms, and their relevance to the magnetic properties
摘要：
我们报告的生长温度依赖的IV族基铁磁半导体Ge 1-xFex薄膜（x = 6.5%和10.5%）的性能，包括晶格常数，居里温度（TC），和Fe原子的位置。虽然TC强烈地依赖于生长温度，我们发现TC和晶格常数之间的普遍关系，这不依赖于Fe含量x。通过使用沟道卢瑟福背散射和粒子诱导X射线发射测量，它是澄清，约15%的Fe原子存在于四面体间隙位在Ge 0.935Fe 0.065晶格和替代Fe浓度与TC不相关。考虑到这些结果，我们认为，铁浓度的不均匀性起着重要的作用，在确定GeFe的铁磁性能。
英文摘要：
We report the growth temperature dependence of the properties of the group-IV-based ferromagnetic semiconductor Ge1-xFex films (x = 6.5% and 10.5%), including the lattice constant, Curie temperature (TC), and Fe-atom locations. While TC strongly depends on the growth temperature, we find a universal relationship between TC and the lattice constant, which does not depend on the Fe content x. By using the channeling Rutherford backscattering and particle-induced X-ray emission measurements, it is clarified that about 15% of the Fe atoms exist in the tetrahedral interstitial sites in the Ge0.935Fe0.065 lattice and that the substitutional Fe concentration is not correlated with TC. Considering these results, we suggest that the non-uniformity of the Fe concentration plays an important role in determining the ferromagnetic properties of GeFe.
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