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arXiv 1405.0551cond-mat.mes-hall
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单壁碳纳米管器件并行制备的研究进展

Recent progress in parallel fabrication of individual single walled carbon nanotube devices

Muhammad R. Islam, Saiful I. Khondaker

摘要:

单壁碳纳米管(SWNTs)由于其优异的物理和电学性能而引起了人们的极大兴趣。特别地,使用单个SWNT制造的电子器件已经显示出超过Si的那些的出色的器件性能。然而,对于基于SWNT的电子器件的广泛应用,需要并行制造技术以及互补金属氧化物(CMOS)兼容性。一种有可能以并联方式在电路的选定位置处集成SWNT的技术是AC介电电泳(DEP)。在本文中,我们回顾了最近的进展,单壁碳纳米管为基础的器件的并行制作使用DEP。综述首先介绍了DEP的理论背景,然后讨论了影响DEP组装单壁碳纳米管的各种参数。我们还回顾了DEP组装的器件的电子输运性质,并表明可以使用DEP制造高性能的器件。本文还评述了用DEP制作全半导体场效应晶体管的技术。最后,我们讨论了单壁碳纳米管的DEP组装的挑战和机遇。

英文摘要:

Single walled carbon nanotubes (SWNTs) have attracted immense research interest because of their remarkable physical and electronic properties. In particular, electronic devices fabricated using individual SWNT have shown outstanding device performance surpassing those of Si. However, for the widespread application of SWNTs based electronic devices, parallel fabrication techniques along with Complementary Metal Oxide (CMOS) compatibility are required. One technique that has the potential to integrate SWNTs at the selected position of the circuit in a parallel fashion is AC dielectrophoresis (DEP). In this paper, we review recent progress in the parallel fabrication of SWNT-based devices using DEP. The review begins with a theoretical background for the DEP and then discusses various parameters affecting DEP assembly of SWNTs. We also review the electronic transport properties of the DEP assembled devices and show that high performance devices can be fabricated using DEP. The technique for fabricating all semiconducting field effect transistor using DEP is also reviewed. Finally, we discuss the challenges and opportunities for the DEP assembly of SWNTs.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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