不透明衬底上生长的GaN纳米线吸收系数的提取
Extraction of absorption coefficients from GaN nanowires grown on opaque substrates
摘要：
我们展示了一种新的方法来测量任何家庭的纳米线的吸收系数，只要它们生长在基板上具有相当大的差异，在介电常数与空气中的空气矩阵。在高晶体质量的情况下，无应变GAN纳米线，生长在Si（111）衬底上的密度为~1010 cm-2，提取的吸收系数没有表现出任何增强相比，体GAN值，不像文献中的相关权利要求。这可能归因于我们的纳米线阵列的相对小的直径、短的高度和高密度。
英文摘要：
We demonstrate a new method to measure absorption coefficients in any family of nanowires, provided they are grown on a substrate having considerable difference in permittivity with the nanowire-air matrix. In the case of high crystal quality, strain-free GaN nanowires, grown on Si (111) substrates with a density of ~1010 cm-2, the extracted absorption coefficients do not exhibit any enhancement compared to bulk GaN values, unlike relevant claims in the literature. This may be attributed to the relatively small diameters, short heights, and high densities of our nanowire arrays.
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