一维纳米结构形状的统计分析：确定自发形成的GaN纳米线的聚结程度
Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires
摘要：
在给定衬底上自发形成的单个GAN纳米线代表没有任何扩展缺陷的纳米级单晶。然而，由于如此形成的GAN纳米线系综的高面积密度，个别纳米线与其紧邻的其它纳米线聚结。这种聚结过程可能会引入应变和结构缺陷，由于纳米线的几何形状，挫败了无缺陷材料的想法。为了研究这一过程的后果，需要对纳米线系综的聚结进行定量测量。我们推导出客观的标准来确定GAN纳米线系综的聚结程度。这些标准是基于观察到的横截面形状的面积-周长关系，特别是它们的圆度。采用这些标准，我们区分单一的纳米线从合并的聚集在一个合奏，确定两者的直径分布，并最终分析纳米线合奏的合并程度与填充因子的增加。
英文摘要：
Single GaN nanowires formed spontaneously on a given substrate represent nanoscopic single crystals free of any extended defects. However, due to the high area density of thus formed GaN nanowire ensembles, individual nanowires coalesce with others in their immediate vicinity. This coalescence process may introduce strain and structural defects, foiling the idea of defect-free material due to the nanowire geometry. To investigate the consequences of this process, a quantitative measure of the coalescence of nanowire ensembles is required. We derive objective criteria to determine the coalescence degree of GaN nanowire ensembles. These criteria are based on the area-perimeter relationship of the cross-sectional shapes observed, and in particular on their circularity. Employing these criteria, we distinguish single nanowires from coalesced aggregates in an ensemble, determine the diameter distribution of both, and finally analyze the coalescence degree of nanowire ensembles with increasing fill factor.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
