NbSi跃迁边缘传感器的电声子耦合
Electron-Phonon Coupling on the NbSi Transition Edge Sensors
摘要：
我们已经建立了一个电子-声子耦合模型来描述的NbxSi 1-x过渡边缘传感器（TES）测辐射热计，通过电子束共蒸发和光刻技术在2英寸的硅片上制造的行为。在200 nA ~ 10 μ A的偏置电流范围内，测量了几种不同厚度的传感器的电阻-温度曲线，并计算了电子-声子耦合系数和电子-声子热导。我们的值是相当可比的金属TES样品中的其他群体使用不同的测量方法，而我们正在使用我们的TES样品的过渡区来计算电子-声子耦合相互作用。
英文摘要：
We have built an electron-phonon coupling model to describe the behavior of the NbxSi1-x transition edge sensor (TES) bolometers, fabricated by electron-beam coevaporation and photolithography techniques on a 2-inch silicon wafer. The resistance versus temperature curves of several sensors with different thickness are measured with different bias currents, ranging from 200 nA to 10 micro A, and the electron-phonon coupling coefficient and the electron-phonon thermal conductance are calculated herein. Our values are quite comparable with those in metallic TES samples of other groups using different measurement methods, while we are using the transition region of our TES sample to calculate the electron-phonon coupling interaction.
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