Any evolving system can change of state via thermal mechanisms (hopping a barrier) or via quantum tunneling. Most of the time, efficient classical mechanisms dominate at high temperatures. This is why an increase of the temperature can initiate the chemistry. We present here an experimental investigation of O-atom diffusion and reactivity on water ice. We explore the 6-25 K temperature range at sub-monolayer surface coverages. We derive the diffusion temperature law and observe the transition from quantum to classical diffusion. Despite of the high mass of O, quantum tunneling is efficient even at 6 K. As a consequence, the solid-state astrochemistry of cold regions should be reconsidered and should include the possibility of forming larger organic molecules than previously expected.
The dielectric breakdown at metal-oxide interfaces is a critical electronic device failure mechanism. Electronic tunneling through dielectric layers is a well-accepted explanation for this phenomenon. Theoretical band alignment studies, providing information about tunneling, have already been conducted in the literature for metal-oxide interfaces. However, most of the time materials were assumed defect free. Oxygen vacancies being very common in oxides, their effect on band lineup is of prime importance in understanding electron tunneling in realistic materials and devices. This work explores …
Nickelate films have recently attracted broad attention due to the observation of superconductivity in the infinite layer phase of $Nd_{0.8}Sr_{0.2}NiO_2$ (obtained by reducing Sr doped $NdNiO_3$ films) and their similarity to the cuprates high temperature superconductors. Here we report on the observation of a new type of transport in oxygen poor $Nd_{0.8}Sr_{0.2}NiO_{3-δ}$ films. At high temperatures, variable range hopping is observed while at low temperatures a novel tunneling behavior is found where Josephson-like tunneling junction characteristic with serial resistance is revealed. We at…
There is a long-standing technological problem in which a stress dwell during cyclic loading at room temperature in Ti causes a significant fatigue life reduction. It is thought that localised time dependent plasticity in soft grains favourably oriented for easy plastic slip leads to load shedding and an increase in stress within a neighbouring hard grain poorly oriented for easy slip. Quantifying this time dependent plasticity process is key to understand the complex cold dwell fatigue problem. Knowing the effect of operating temperature and oxygen content on cold dwell fatigue will be benefi…
Oxygen (O2) adsorbed on metal oxides is important in catalytic oxidation reactions, chemical sensing, and photocatalysis. Strong adsorption requires transfer of negative charge from oxygen vacancies (VOs) or dopants, for example. With scanning tunneling microscopy, we observed, transformed, and, in conjunction with theory, identified the nature of O2 molecules on the (101) surface of anatase (titanium oxide, TiO2) doped with niobium. VOs reside exclusively in the bulk, but we pull them to the surface with a strongly negatively charged scanning tunneling microscope tip. O2 adsorbed as superoxo …
Atomic scale defects in semiconductors enable their technological applications and realization of novel quantum states. Using scanning tunneling microscopy and spectroscopy complemented by ab-initio calculations we determine the nature of defects in the anisotropic van der Waals layered semiconductor ReS$_2$. We demonstrate the in-plane anisotropy of the lattice by directly visualizing chains of rhenium atoms forming diamond-shaped clusters. Using scanning tunneling spectroscopy we measure the semiconducting gap in the density of states. We reveal the presence of lattice defects and by compari…
Herein, we invesgate the consequence of local voltage pulses on the adsorption state of single indigo molecules on the Cu(111) surface as well as on the atomic structure underneath the molecule. With a scanning tunneling microscope, at 5 K, intact molecules are imaged as two lobes corresponding to the electron density of each indoxyl moiety of the molecule which are connected by a carbon double bond. Then, two short successive voltage pulses with the tip placed above the molecule generate irreversible modifications, as revealed by consecutive scanning tunneling microscopy (STM) imaging. Densit…
The influence of the electric field and electric current on the behavior of oxygen vacancies (VOs) in TiO2 anatase was investigated with Scanning Tunneling Microscopy (STM). At the anatase (101) surface VOs are not stable; they migrate into the bulk at temperatures above 200 K. Scanning a clean anatase (101) surface at a sample bias greater than +4.3 V results in surface VOs in the scanned area, suggesting that subsurface VOs migrate back to the surface. To test this hypothesis, surface VOs were first created through bombardment with energetic electrons. The sample was then mildly annealed, wh…
We report on the oxidation of self-assembled silicene nanoribbons grown on the Ag(110) surface using Scanning Tunneling Microscopy and High-Resolution Photoemission Spectroscopy. The results show that silicene nanoribbons present a strong resistance towards oxidation using molecular oxygen. This can be overcome by increasing the electric field in the STM tunnel junction above a threshold of +2.6 V to induce oxygen dissociation and reaction. The higher reactivity of the silicene nanoribbons towards atomic oxygen is observed as expected. The HR-PES confirm these observations: Even at high exposu…
The charge transport mechanism of electron via traps in amorphous SiO$_2$ has been studied. Electron transport is limited by phonon-assisted tunneling between traps. Thermal and optical trap energies $W_\mathrm{t}=1.6$ eV, $W_\mathrm{opt}=3.2$ eV, respectively, were determined. Charge flowing leads to oxygen vacancies generation, and the leakage current increases due to the increase of charge trap density. Long-time annealing at high temperatures decreased the leakage current to initial values due to oxygen vacancies recombination with interstitial oxygen. It is found that the oxygen vacancies…
The chemical inertness of the defect-free basal plane confers environmental stability to MoS2 single-layers, but it also limits their chemical versatility and catalytic activity. The stability of the pristine MoS2 basal plane against oxidation under ambient conditions is a widely accepted assumption in the interpretation of various studies and applications. However, single-atom level structural investigations reported here reveal that oxygen atoms spontaneously incorporate into the basal plane of MoS2 single layers during ambient exposure. Our scanning tunneling microscopy investigations revea…
Origin of a Superlattice Observed in Li$_{0.9}$Mo$_{6}$O$_{17}$ by Scanning Tunneling Microscopy
利用扫描隧道显微镜对锂紫青铜（Li $_{0.9}$ Mo $_{6}$ O $_{17}$）进行了室温下的研究。我们的测量使我们能够识别单晶解理面，并表明，它是可能的，以获得清洁的解理表面反映的晶体结构，而没有纳米级的表面无序的并发症。除了晶格之外，我们还观察到共存的不相称超晶格，波矢q = 0.5a* $\pm$ 0.25 b *。我们建议，超结构的起源是一个表面重建，这是驱动沿晶面，其中包含面内MoO $_{4}$四面体连接到面外MoO $_{6}$八面体通过角共享氧解理。当结合光谱测量，我们的研究显示了一个有前途的途径，通过它来研究复杂的物理在Li $_{0.9}$ Mo $_{6}$ O $_{17}$。
Vanadium dioxide undergoes a metal-insulator transition (MIT) from an insulating (monoclinic) to a metallic (tetragonal) phase close to room temperature, which makes it a promising functional material for many applications, e.g. as chemical sensors. Not much is known about its surface and interface properties, although these are critical in many of its applications. This work presents an atomic-scale investigation of the tetragonal rutile VO$_2$(110)$_\text{T}$ single-crystal surface and reports results obtained with scanning tunneling microscopy (STM), low-energy electron diffraction (LEED) a…
Point contact tunneling (PCT) spectroscopy measurements are reported over wide areas of cm-sized cut outs from niobium superconducting RF cavities. A comparison is made between a high-quality, conventionally processed (CP) cavity with a high field Q drop for acceleration field E $>$ 20 MV/m and a nitrogen doped (N-doped) cavity that exhibits an increasing Q up to fields approaching 15 MV/m. The CP cavity displays hot spot regions at high RF fields where Q-drop occurs as well as unaffected regions (cold spots). PCT data on cold spots reveals a near ideal BCS density of states (DOS) with gap par…
