对“快重离子与silicon carbide晶体电子相互作用诱导重结晶过程的实验和计算研究”一文的评论
Comment on "Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals"
摘要：
Debelle等人最近的一篇论文[Phys.Rev.B86，100102（R）（2012）]报道了快速重离子在预损伤碳化硅晶体中诱导的重结晶过程的实验和计算研究。在这项研究中，作者试图通过分子动力学模拟模拟低能离子辐照SiC引起的损伤产生和随后的快速重离子辐照产生的再结晶效应。在这里，我们表明，由作者进行的模拟是远远不现实的，不能重现，甚至定性，实验结果。事实上，在他们的损伤产生的模拟中，非晶化是在每个靶原子的沉积能量（$\sim$ 5.4 eV/atom）的量下达到的，该量比在先前的实验和计算研究中发现的少近5倍，而对于再结晶过程的模拟，每个入射离子的再结晶速率比实验值高约40倍。由于这些极其巨大的差异，这些分子动力学计算是完全错误的，作者不能声称他们发现了“实验和模拟之间非常好的一致性”，以及“回收过程明确地被热尖峰现象所解释”。此外，没有提到最近由一些作者发表的非常相似的实验研究，但对于完全非晶SiC的情况，结果却完全不同。
英文摘要：
A combined experimental and computational study of the recrystallization process induced by swift heavy ions in pre-damaged silicon carbide crystals was reported in a recent paper by Debelle et al. [Phys. Rev. B 86, 100102(R) (2012)]. In this study, the authors tried to mimic by means of molecular dynamic simulations both damage production induced by low energy ion irradiation in SiC and the recrystallization effect generated by subsequent swift heavy ion irradiation. Here we show that the simulations performed by the authors are far from being realistic and cannot reproduce, even qualitatively, the experimental results. In fact, in their simulation of damage production, amorphization is reached at an amount of deposited energy per target atom ($\sim$5.4 eV/atom) which is nearly 5 times less than what is found in previous experimental and computational studies, whereas for the simulation of the recrystallization process, the recrystallization rate per incident ion is about 40 times higher than the experimental value. Because of these extremely huge discrepancies, these molecular dynamic calculations are completely erroneous and the authors cannot claim that they found an "exceptionally good agreement between experiments and simulations" and that "the recovery process is unambiguously accounted for by the thermal spike phenomenon". In addition, no mention is given about a very similar experimental study recently published by some of the authors but with a quite different result for the case of fully amorphous SiC.
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