光学应用中的材料和物理化学特性研究
Élaboration du Ge mésoporeux et étude de ses propriétés physico-chimiques en vue d'applications photovoltaïques
摘要：
本论文的主题是通过双极电化学蚀刻（BEE）开发新型纳米材料--介孔Ge，并分析其物理化学性质。通过电化学蚀刻形成介孔Ge先前在文献中报道。然而，到目前为止，实现厚（500 nm以上）的介孔Ge层与完美控制的形态一直是一个问题。事实上，薄层的物理化学表征要复杂得多，可能的应用数量非常有限。我们已经开发了一个电化学模型，它描述了孔形成的主要机制，使我们能够产生厚（高达10 μ m）介孔Ge结构的孔隙率可调的范围为15%至60%此外，形成多孔纳米结构，良好控制的可变形态现在已经成为可能。最后，这些参数的掌握，打开了非常有前途的路径实现多孔多层结构的基础上，Ge的许多创新和多学科的应用。特别地，在本论文的上下文中，Ge的介孔层被优化用于通过多孔Ge的牺牲层执行三结太阳能电池的层转移过程。关键词：介孔锗，双极性电化学蚀刻，半导体电化学，层转移过程，太阳能电池。
英文摘要：
Development of the new nanomaterial - the mesoporous Ge - by bipolar electrochemical etching (BEE) and analysis of its physico-chemical properties is the subject of this thesis. Formation of mesoporous Ge by electrochemical etching was previously reported in the literature. However, up to now, realization of thick (above 500 nm) mesoporous Ge layers with perfectly controlled morphology has been an issue. Indeed, the physico-chemical characterization of thin layers is much more complicated and the number of possible applications is very limited. We have developed an electrochemical model that describes the principal mechanisms of the pore formation which allowed us to produce the thick (up to 10 um) mesoporous Ge structures with the porosity adjustable in the range of 15% to 60% In addition, the formation of porous nanostructures with well-controlled variable morphologies has now become possible. Finally, the mastery of these parameters has opened the extremely promising path towards realization of porous multilayer structures based on Ge for many innovative and multidisciplinary applications. In particular, in the context of this thesis, the mesoporous layers of Ge were optimized for performing a layer transfer process of a triple-junction solar cell via a sacrificial layer of porous Ge. Keywords: mesoporous Germanium, bipolar electrochemical etching, electrochemistry of semiconductors, layer transfer process, solar cells.
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