We investigate the resistivity and dephasing rate in the Kondo regime due to magnetic impurities in graphene with different chemial potentials ($μ$). The Kondo effect due to either carbon vacancies or magnetic adatoms in graphene is described by the single-orbital pseudo-gap asymmetric Anderson impurity model. We find that although the Anderson impurity model considered here is a mixed valence system, it can be drived into either the Kondo [$μ> μ_c$ (critical value) $>0$] or mixed valency ($μ\approx μ_c$) or empty orbital ($μ< μ_c$) regime by a gate voltage, giving rise to characteristic features in resistivity and dephasing rate in each regime. Specifically, in the case of $μ< μ_c$, the shapes of the resistivity (dephasing rate) curves for different $μ$ are nearly identical. However, as temperature decreases, they start to increase to their maxima at a lower $T/T_K$ but more rapidly [as $(T_K/T)^{3/2}$] than in normal metals [here $T$ ($T_K$) denotes the (Kondo) temperature]. As $T$ further decreases, after reaching the maximum, the dephasing rate drops more quickly than in normal metals, behaving as $(T/T_K)^3$ instead of $(T/T_K)^2$. Furthermore, the resistivity has a distinct peak above the saturation value near $T_K$. In the case of $μ> μ_c$, in contrast, the resistivity curve has an additional broad shoulder above 10$T_K$ and the dephasing rate exhibits an interesting shoulder-peak shape. In the narrow boundary region ($μ\approx μ_c$), both the resistivity and dephasing rate curves are similar to the corresponding ones in normal metals. This explains the conventional Kondo like resistivity from recent experiments on graphene with defects. The resistivity and dephasing rate are analysized in terms of the calculated $T$-dependent spectral function, correlation self-energy and renormalized impurity level.
Universal dephasing rate due to diluted Kondo impurities
我们计算了弱无序金属中磁性杂质引起的退相速率。当磁性杂质的密度n_S足够低时，失相速率1/tau_phi是一个普适函数，1/tau_phi =（n_S/nu）f（T/T_K），其中T_K为近藤温度，nu为态密度。结果表明，具有典型能量转移Δ E的非弹性顶点修正被1/（tau_phi Δ E）的幂次抑制.因此，可以根据与π nu Im T成比例的非弹性截面来计算失相速率。|π nu T|其中T是T矩阵，它是用数值重整化群精确数值计算的。
Quantitative theory of backscattering in topological HgTe and (Hg,Mn)Te quantum wells: acceptor states, Kondo effect, precessional dephasing, and bound magnetic polaron
Low temperature dephasing in irradiated metallic wires
我们提出了相位相干时间测量准一维银线注入银$^{+}$离子的能量为$100 keV$。测量已进行的温度范围从$100 mK$到$10 K$ ;这必须与近藤温度的铁在银，即$T_{K}^{Ag/Fe} \approx 4 K$，在最近的实验中使用的近藤系统\cite{mallet_prl_06,birge_prl_06}的移相。我们发现，相位相干时间不受注入过程的影响，清楚地证明了离子注入过程本身\emph{does not lead to any extra dephasing}在低温下。
Nonequilibrium transport through an interacting monitored quantum dot
Institute of Theoretical and Computational Physics, Graz University of Technology（格拉茨工业大学理论与计算物理研究所）；JEIP, UAR 3573 CNRS, Collège de France, PSL Research University（法国国家科学研究中心联合研究单位3573 JEIP，法兰西学院，巴黎文理研究大学）
电阻率最小值通常出现在巡回磁铁，他们往往归因于近藤效应。然而，最近的实验揭示了越来越多的材料在没有近藤单线态形成迹象的情况下显示出电阻率最小值。在以前的工作[Z。Wang，K.巴罗斯，G.- W. Chern，D. L. Maslov和C. D. Batista，Phys. Rev. Lett. 117，206601（2016）]，我们证明了Ruderman-Kittel-Kasuya-Yosida（RKKY）相互作用可以在有限温度下产生经典的自旋液体状态，其电阻率随着温度的降低而增加。由于二维电子气产生的RKKY相互作用的受抑性质，经典自旋液体存在于相对较大的温度窗口上。在这项工作中，我们调查的鲁棒性RKKY诱导电阻率上升对网站稀释，这提供了一种替代的，更强大的，稳定的经典自旋液体状态的方式下降到T=0。通过使用级数展开和随机Landau-Lifshitz动力学模拟，我们表明，网站稀释竞争与热波动，并进一步稳定电阻率上升，这是伴随着一个负的磁阻由于抑制电子自旋散射。
