Pt/Co/（Pt，Cr）/ CoO薄膜中垂直交换偏置的界面诱导调控
Interface induced manipulation of perpendicular exchange bias in Pt/Co/(Pt, Cr)/CoO thin films
摘要：
在Pt/Co/（Pt，Cr）/CoO薄膜中，通过改变铁磁膜的厚度和间隔层来控制铁磁膜的垂直向交换偏置。薄膜的交换偏置特性、阻断温度、磁化强度等都与铁磁层和反铁磁层之间的隔离层（Pt、Cr）密切相关。Pt/Co/Pt/CoO薄膜表现为垂直交换偏置，而Pt/Co/Cr/CoO薄膜的易磁化轴位于薄膜平面内。从Pt/Co/Cr/CoO薄膜的难磁化曲线上也观察到了很小的磁滞现象。这可归因于样品的未对准或来自Pt/Co底部界面的小的垂直贡献。我们还研究了温度和间隔层依赖的样品的交换偏置性质的VSM磁强计。在Pt/Co/Pt/CoO样品中，我们观察到更厚的Co层具有更高的HEB和HC。此外，对于Pt/Co/Cr/CoO薄膜，交换偏置效应的起始温度要低得多。这清楚地表明，Cr间隔层不仅消除了垂直交换偏置，而且减少了Co和CoO之间的交换相互作用，从而降低了阻断温度。
英文摘要：
Perpendicular exchange bias has been manipulated by changing ferromagnetic film thickness and spacer layer in Pt/Co/(Pt, Cr)/CoO thin films. The exchange bias characteristics, blocking temperature, magnetization of thin films strongly depend on the spacer layer (Pt, Cr) between ferromagnetic and antiferromagnetic layers. While Pt/Co/Pt/CoO thin films show perpendicular exchange bias, Pt/Co/Cr/CoO has easy magnetization axis in the film plane. We have also observed very small hysteretic behavior from the hard axis magnetization curve of Pt/Co/Cr/CoO film. This can be attributed to misalignment of the sample or small perpendicular contribution from Pt/Co bottom interface. We have also investigated the temperature and spacer layer dependent exchange bias properties of the samples by VSM magnetometry. We observed higher HEB and HC for the thicker Co layer in the Pt/Co/Pt/CoO sample. In addition, onset of exchange bias effect starts at much lower temperatures for Pt/Co/Cr/CoO thin film. This clearly shows that Cr spacer layer not only removes the perpendicular exchange bias, but also reduces the exchange interaction between Co and CoO and thus lowers the blocking temperature.
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