彭罗斯镶嵌近似体的电子结构和输运
Electronic structure and transport in approximants of the Penrose tiling
摘要：
我们提出的电子结构和输运的彭罗斯近似的数值计算。完美近似物的电子结构显示出尖峰态密度和在能带中间更明显的局域化趋势。在能带边缘附近的行为更类似于自由电子的行为。这些计算的能带结构，特别是带标度提出了一个异常的量子扩散相比，正常的弹道晶体。这是证实了量子扩散的数值计算，它显示了从正常的弹道传播在很长一段时间的异常，可能绝缘体，在短时间内的行为的交叉。该交叉的时间尺度t*（E）是针对几个近似值计算的，并进行了详细说明。电子电导率的后果进行了讨论的背景下的弛豫时间近似。导电性的金属类或非金属类行为由由于缺陷引起的散射时间与时间尺度t*（E）之间的比较决定。
英文摘要：
We present numerical calculations of electronic structure and transport in Penrose approximants. The electronic structure of perfect approximants shows a spiky density of states and a tendency to localization that is more pronounced in the middle of the band. Near the band edges the behavior is more similar to that of free electrons. These calculations of band structure and in particular the band scaling suggest an anomalous quantum diffusion when compared to normal ballistic crystals. This is confirmed by a numerical calculation of quantum diffusion which shows a crossover from normal ballistic propagation at long times to anomalous, possibly insulator-like, behavior at short times. The time scale t*(E) for this crossover is computed for several approximants and is detailed. The consequences for electronic conductivity are discussed in the context of the relaxation time approximation. The metallic like or non metallic like behavior of the conductivity is dictated by the comparison between the scattering time due to defects and the time scale t*(E).
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