半导体太阳能超吸收器
Semiconductor solar superabsorber
摘要：
了解半导体材料通过光捕获最大限度地增强太阳能吸收，有望开发出负担得起的太阳能电池。然而，传统的朗伯极限仅适用于具有弱吸收的理想化材料系统，并且由于这些材料的大量吸收而不能适用于太阳能电池中使用的典型半导体材料。本文从理论上论证了半导体材料的最大太阳吸收增强效应，并阐明了光捕获结构接近理论最大值的一般设计原则。通过遵循这些原理，我们设计了一种实用的光捕获结构，该结构可以使半导体材料的半导体层（例如，10 nm厚的a-Si）在带隙以上吸收> 90%的太阳光。该设计具有比文献中任何现有的太阳光捕获设计小一个数量级的活性材料。这项工作指向最终太阳光捕获技术的发展。
英文摘要：
Understanding the maximal enhancement of solar absorption in semiconductor materials by light trapping promises the development of affordable solar cells. However, the conventional Lambertian limit is only valid for idealized material systems with weak absorption, and cannot hold for the typical semiconductor materials used in solar cells due to the substantial absorption of these materials. Herein we theoretically demonstrate the maximal solar absorption enhancement for semiconductor materials and elucidate the general design principle for light trapping structures to approach the theoretical maximum. By following the principles, we design a practical light trapping structure that can enable an ultrathin layer of semiconductor materials,for instance, 10 nm thick a-Si, absorb > 90% sunlight above the bandgap. The design has active materials with one order of magnitude less volume than any of the existing solar light trapping designs in literature. This work points towards the development of ultimate solar light trapping techniques.
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