直接Laser微图案化制备具有可控光电性能的GeSe2纳米结构
Direct Laser Micropatterning of GeSe2 Nanostructures with Controlled Optoelectrical Properties
摘要：
我们证明了直接聚焦的激光束照射能够实现GeSe 2纳米结构（NS）薄膜的局部改性。利用扫描聚焦激光束装置，直接在衬底上形成GeSe 2 NS薄膜上的微图案。通过改变激光功率和处理环境来实现NS的受控结构和化学变化。激光修饰的GeSe 2纳米结构具有独特的光学、电学和光电性能。进行了详细的表征和激光诱导的变化的可能机制进行了讨论。与原始纳米结构膜相比，激光改性的NS膜显示出优异的光电导特性。具有改进功能的微图案的构造可以证明在微型光电器件中是有用的。
英文摘要：
We demonstrate that a direct focused laser beam irradiation is able to achieve localized modification on GeSe2 nanostructures (NSs) film. Using scanning focused laser beam setup, micropatterns on GeSe2 NSs film are created directly on the substrate. Controlled structural and chemical changes of the NSs are achieved by varying laser power and treatment environment. The laser modified GeSe2 NSs exhibit distinct optical, electrical and optoelectrical properties. Detailed characterization is carried out and the possible mechanisms for the laser induced changes are discussed. The laser modified NSs film shows superior photoconductivity properties as compared to the pristine nanostructure film. The construction of micropatterns with improved functionality could prove to be useful in miniature optoelectrical devices.
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