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arXiv 1310.4115cond-mat.mes-hallhep-th
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窄带隙半导体、Weyl半金属和高电荷核周围的费米子空间电荷

Fermion space charge in narrow-band gap semiconductors, Weyl semimetals and around highly charged nuclei

Eugene B. Kolomeisky, Joseph P. Straley, Hussain Zaidi

摘要:

窄带隙半导体和Weyl半金属中的带电杂质的场在杂质的总电荷$Ze$超过值$Z_{c}e$时可以产生电子-空穴对。一个电荷的粒子逃逸到无穷远,留下一个屏蔽空间电荷。结果是,可观察到的无量纲杂质电荷$Q_{\infty}$小于$Z$但大于$Z_{c}$。对于具有$Z >Z_{c} \approx 170$的核,存在相应的效应,然而在凝聚态设置中,我们发现$Z_{c} \simeq 10$。Fermi理论指出$Q_{\infty} = 0$为Weyl半金属,但我们认为这是该理论的一个缺陷。对于窄带隙半导体(或超荷核)中的高电荷复合中心的情况,可观察到的电荷具有几乎普遍的值。在外尔半金属中,可观测的电荷具有由材料精细结构常数的倒数设定的普适值$Q_{\infty} = Z_{c}$。

英文摘要:

The field of charged impurities in narrow-band gap semiconductors and Weyl semimetals can create electron-hole pairs when the total charge $Ze$ of the impurity exceeds a value $Z_{c}e$. The particles of one charge escape to infinity, leaving a screening space charge. The result is that the observable dimensionless impurity charge $Q_{\infty}$ is less than $Z$ but greater than $Z_{c}$. There is a corresponding effect for nuclei with $Z >Z_{c} \approx 170$, however in the condensed matter setting we find $Z_{c} \simeq 10$. Thomas-Fermi theory indicates that $Q_{\infty} = 0$ for the Weyl semimetal, but we argue that this is a defect of the theory. For the case of a highly-charged recombination center in a narrow band-gap semiconductor (or of a supercharged nucleus), the observable charge takes on a nearly universal value. In Weyl semimetals the observable charge takes on the universal value $Q_{\infty} = Z_{c}$ set by the reciprocal of material's fine structure constant.

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